功率半导体器件表面工艺机理研究  

Study on the Surface Process Mechanism of Power Semiconductor Devices

作　　者：高山城 赖桂森 谢永泉 邵珠柯 GAO Shan-cheng;LAI Gui-sen;XIE Yong-quan;SHAO Zhu-ke(Xi'an PERI Power Semiconductor Converting Technology Co.,Ltd.,Xi'an 710077,China;不详)

机构地区：[1]西安派瑞功率半导体变流技术股份有限公司,陕西西安710077 [2]中国南方电网超高压输电公司广州局,广东广州510700

出　　处：《电力电子技术》2023年第3期131-134,共4页Power Electronics

摘　　要：基于功率半导体表面造形技术的理论基础,详细分析了大功率高电压硅二极管表面成形工艺中的斜角形成,表面腐蚀,表面清洁处理和表面钝化的关键技术,通过多种实验的方法,得出伏安特性的结论以及今后工艺改进的方向。Based on the theoretical basis of power semiconductor surface shaping technology,the key technologies of bevel formation,surface etching,surface cleaning and surface passivation in the forming process of high-power and high-voltage silicon diode are analyzed in detail,the conclusion of volt-ampere characteristics and the direction of technological improvement in the future are obtained by various experiment methods.

关 键 词：硅二极管 表面腐蚀 表面清洁 表面钝化 

分 类 号：TN31[电子电信—物理电子学]