一种低温度系数带隙基准电压源的设计  

A Low Temperature Coefficient Bandgap Voltage Reference Source

作　　者：张冶 吕辉[1] 任佳锐 郑浩 Zhang Ye;Lü Hui;Ren Jiarui;Zheng Hao(School of Science,Hubei University of Technology,Wuhan 430068,China;College of Electronic and Optical Engineering,Nankai University,Tianjin 300350,China;Shanghai Gewei Semiconductor Co Ltd,Shanghai 201203,China)

机构地区：[1]湖北工业大学理学院,湖北武汉430068 [2]南开大学电子信息与光学工程学院,天津300350 [3]上海格巍半导体有限公司,上海201203

出　　处：《南开大学学报（自然科学版）》2023年第1期13-18,共6页Acta Scientiarum Naturalium Universitatis Nankaiensis

基　　金：湖北省高等学校优秀中青年科技创新团队计划项目(T201907);国家电网有限公司总部科技项目(5700-202155257A-0-0-00)。

摘　　要：设计采用双极性结型晶体管产生一个二阶温度补偿电压,并将其与一阶温度补偿电压加权叠加得到一个低温度系数的带隙电压.通过采用增大运放增益和负反馈回路提高电源抑制比.电路基于0.13μm BCD工艺实现,使用Cadence中Spectre环境进行仿真.在工作电源电压为5 V的情况下,温度等于27℃时输出电压为1.209 V,电源电压抑制比为-58 d B@100 Hz,在-40-130℃温度范围内,输出电压变化范围为0.93 mV,平均温度系数为4.51 ppm/℃.The bipolar junction transistor was used to generate a second-order temperature compensation voltage, which is weighted and superimposed with the first-order temperature compensation voltage to obtain a band gap voltage with low temperature coefficient. The power rejection ratio was improved by increasing the gain of operational amplifier and negative feedback loop. Circuit based on 0.13 μm BCD process was realized. The spectrum environment in cadence was used for simulation. When the working power supply voltage is 5 V and the temperature is equal to 27 ℃, the output voltage is 1.209 V and the power supply voltage suppression ratio is-58 d B@100 Hz. In the temperature range of-40-130 ℃, the variation range of output voltage is 0.93 mV, and the average temperature coefficient is 4.51 ppm/℃.

关 键 词：带隙基准电压源 二阶补偿 高电源抑制比 低温度系数 

分 类 号：TN402[电子电信—微电子学与固体电子学]