硒化铅芯片的制备及测试分析  

Preparation and Test Analysis of Lead Selenide Chip

作　　者：邹红军 ZOU Hongjun(Shaanxi Huaxing Electronics Group Co.,Ltd.,Xianyang 712099,China)

机构地区：[1]陕西华星电子集团有限公司,陕西咸阳712099

出　　处：《电子工艺技术》2023年第2期41-43,共3页Electronics Process Technology

摘　　要：以醋酸铅Pb(AC)_(2)和硒脲NH_(2)CSeNH_(2)为主要反应材料,以三碘化钾KI_(3)等物质为缓冲剂,采用化学沉积的方法制作硒化铅PbSe芯片。对制作出的硒化铅PbSe芯片进行电镜扫描、能谱分析及X-ray衍射分析,发现硒化铅芯片光电性能和结构有密切关系。With lead acetate Pb(AC)_(2)and selenourea NH_(2)CSeNH_(2)as the main reaction materials,and potassium triiodide KI_(3)as the buffer agent,the lead selenide PbSe chip is made by chemical deposition method.Electron mirror scanning and energy spectrum analysis and X-ray diffraction analysis of the PbSe chip are found that the photoelectric performance and structure of the lead selenide chip are closely related.

关 键 词：硒化铅芯片 化学沉积 光电导 光谱响应 光电性能 

分 类 号：TN40[电子电信—微电子学与固体电子学]