Long wavelength interband cascade photodetector with type Ⅱ InAs/GaSb superlattice absorber  

作　　者：Shaolong Yan Jianliang Huang Ting Xue Yanhua Zhang Wenquan Ma 

机构地区：[1]The Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Journal of Semiconductors》2023年第4期81-85,共5页半导体学报（英文版）

基　　金：supported in part by China’s NSF Program 61874103

摘　　要：We report on a long wavelength interband cascade photodetector with type Ⅱ InAs/GaSb superlattice absorber.The device is a three-stage interband cascade structure.At 77 K,the 50%cutoff wavelength of the detector is 8.48μm and the peak photoresponse wavelength is 7.78μm.The peak responsivity is 0.93 A/W and the detectivity D*is 1.12×10^(11)cm·Hz0.5/W for 7.78μm at-0.20 V.The detector can operate up to about 260 K.At 260 K,the 50%cutoff wavelength is 11.52μm,the peak responsivity is 0.78 A/W and the D*is 5.02×10^(8)cm·Hz0.5/W for the peak wavelength of 10.39μm at-2.75 V.The dark current of the device is dominated by the diffusion current under both a small bias voltage of-0.2 V and a large one of-2.75 V for the temperature range of 120 to 260 K.

关 键 词：interband cascade infrared photodetector type II superlattices long wavelength 

分 类 号：TN215[电子电信—物理电子学]