980nm渐变双波导激光二极管及其光电性能研究  

Study of 980 nm tapering dual waveguide laser diodes and its photoelectric properties

作　　者：胡雪莹 董海亮[1,2] 贾志刚 贾伟 梁建[3] 王智勇 许并社[1,2,5] HU Xue-ying;DONG Hai-liang;JIA Zhi-gang;JIA Wei;LIANG Jian;WANG Zhi-yong;XU Bing-she(Key Laboratory of Interface Science and Engineering in Advanced Materials Ministry of Education,Taiyuan University of Technology,Taiyuan 030024,China;Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering,Taiyuan 030024,China;College of Materials Science and Engineering,Taiyuan University of Technology,Taiyuan 030024,China;Institute of Laser Engineering,Beijing University of Technology,Beijing 100024,China;Institute of Atomic and Molecular Science,Shaanxi University of Science and Technology,Xi′an 710021,China)

机构地区：[1]太原理工大学新材料界面科学与工程教育部重点实验室,山西太原030024 [2]山西浙大新材料与化工研究院,山西太原030024 [3]太原理工大学材料科学与工程学院,山西太原030024 [4]北京工业大学激光工程研究院,北京100024 [5]陕西科技大学材料原子·分子科学研究所,陕西西安710021

出　　处：《激光与红外》2023年第3期370-376,共7页Laser & Infrared

基　　金：国家自然科学基金(No.61904120,21972103);山西浙大新材料与化工研究院(No.2021SX-AT2002);国家重点研发计划(No.2016YFB0401803);山西省基础研究项目(No.201901D111111,No.201901D211090)资助。

摘　　要：为了提高980 nm激光二极管的光电性能,设计了Al组分内波导正向和外波导反向线性渐变的新型非对称双波导激光二极管。采用一维漂移扩散模型为理论基础,对新结构和传统结构进行了仿真模拟,并对比分析了两者的光电性能。光场分布表明,新结构通过改变波导折射率分布,减少了高阶模式数量,改善了基模的单模特性。能带排列表明,新型非对称双波导结构显著提高了电子和空穴泄漏的势垒,阻挡了载流子泄漏,增强了有源区的载流子限制能力,从而降低了有源区载流子浓度,提高了器件的内量子效率。与传统波导结构对比分析表明,新型非对称双波导结构激光二极管的阈值电流下降了27.65%,工作电压降低了15.24%。在注入电流为5 A时,输出功率达到5.36 W,电光转换效率达到78.06%。设计的新型波导结构提高了980 nm激光二极管的光电性能,对研发高性能激光二极管具有重要的理论指导意义。A novel asymmetric dual waveguide laser diode with linear taping of the Al composition gradient inner waveguide layer forward and outer waveguide layer reverse is designed for improving the photo-electric properties of 980 nm laser diode.A one-dimensional drift-diffusion model is used as the theoretical basis for simulating the new structure and the conventional structure,and the optoelectronic performance of both is compared and analyzed.The optical field distribution shows that the new structure reduces the number of high-order modes and improves the single-mode characteristics of the fundamental mode by changing the refractive index distribution of the waveguide.The band alignment demonstrates that the novel asymmetric dual waveguide structure significantly raises the potential barriers for electron and hole leakage,suppresses the leakage of carriers and enhances the carrier confinement capability of the active region thus reducing the carrier concentration in the active region and improving the internal quantum efficiency of the device.Comparative analysis with the conventional waveguide structure shows that the threshold current of the designed structure is decreased by 27.65%,and the operating voltage is decreased by 15.24%.The output power reaches 5.36 W and the electro-optical conversion efficiency reaches 78.06%,at the injection current of 5 A.The novel waveguide structure improves optoelectronic performance of 980 nm laser diodes and is of great theoretical importance for the development of high performance laser diodes.

关 键 词：激光二极管 双波导结构 Al组分渐变 光电性能 

分 类 号：TN248.4[电子电信—物理电子学]