晶格失配对InAs基室温中波红外探测器性能的影响  

Effects of lattice mismatch on performance of InAs-based room temperature mid-infrared detector

作　　者：段永飞 张振宇 陈泽中[1] 胡淑红[2] DUAN Yong-fei;ZHANG Zhen-yu;CHEN Ze-zhong;HU Shu-hong(School of Materials and Chemistry,University of Shanghai for Science and Technology,Shanghai 200093,China;Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,Shanghai 200083,China)

机构地区：[1]上海理工大学材料与化学学院,上海200093 [2]中国科学院上海技术物理研究所,上海200083

出　　处：《激光与红外》2023年第3期402-407,共6页Laser & Infrared

摘　　要：采用液相外延技术生长了InAs基室温红外探测器件材料,通过光学显微镜、扫描电子显微镜、X射线衍射仪分析了外延材料表面形貌、截面形貌与晶格失配的关系。分析发现,不恰当的晶体晶格常数匹配度会导致材料表面形貌变差,降低材料的结晶质量,晶格失配在0.22%左右的InAs基外延材料表面形貌较好,缺陷少,晶体质量较好。在此基础上,成功制备出室温探测率D^(*)为6.8×10^(9)cm·Hz^(1/2)·W^(-1)的InAs基室温中波红外探测器,这一性能与国际上红外探测器领军企业美国Teledyne Judson Technologies和日本滨松株式会社的商用InAs基红外探测器性能处于同等水平。InAs-based room temperature infrared detector are grown by liquid phase epitaxy(LPE),and the relationship between surface morphology,cross-sectional morphology and lattice mismatch of epilayers is analyzed by optical microscope,scanning electron microscope(SEM)and X-ray diffractometer(XRD).The results show that unsuitable lattice mismatch lead to the deterioration of surface morphology and reduce crystallization quality of InAsSbP epilayer.InAsSbP epilayers with lattice mismatch around 0.22%have better surface morphology,few defects and better crystallization quality.On this basis,an InAs-based mid-wave infrared detector with the room-temperature detectivity([WTBX]D^(*))of 6.8×10^(9)cm·Hz^(1/2)·W^(-1)is successfully prepared.This performance is at the same level as comparable to that of commercial InAs-based infrared detector from international leaders Teledyne Judson Technologies(USA)and Hamamatsu Corporation(Japan).

关 键 词：外延薄膜 半导体材料与器件 光伏探测器 红外材料与器件 

分 类 号：TN215[电子电信—物理电子学]