适用于低压EEPROM编程的双电荷泵电路系统设计  

Design of Dual-charge Pump System Applied in Low-voltage EEPROM Operation

作　　者：李珂[1] 顾飞[1] 陈献文 周威威 LI Ke;GU Fei;CHEN Xianwen;ZHOU Weiwei(The N0.58 Research Institute of China Electronic Technology Group Corp.,Wuxi,Jiangsu,214000,CHN)

机构地区：[1]中国电子科技集团公司第五十八研究所,江苏无锡214000

出　　处：《固体电子学研究与进展》2023年第1期78-82,共5页Research & Progress of SSE

摘　　要：设计了一款应用于低电源电压EEPROM的双电荷泵电路结构,提供存储单元编程所需的高压。基于传统Dickson结构,设计主次两级电荷泵结构:次级电荷泵为两级升压结构,输出电压可增强时钟的驱动能力、抬高其高电平;主级电荷泵采用传输管栅压提升的结构及驱动能力增强的时钟对内部电容进行充放电,提高主级电荷泵每级的传输能力及整体电路的工作效率,最终实现低电源电压下产生高压的目的。同时,通过使能时序控制稳压系统电路,保证了输出电压的稳定性。仿真结果显示,电荷泵升降压速度快、纹波小、效率高。该双电荷泵电路已实际应用于芯片设计中,采用0.18μm EEPROM工艺流片,输出高压稳定,达到设计要求,并且性能良好。A dual-charge pump circuit structure for low power supply voltage EEPROM was designed to provide high voltage required for the programming operation of memory units.Based on the traditional Dickson structure,a primary and secondary charge pump structure was designed.The secondary charge pump was a two-stage boost structure with its output voltage could enhance drive capacity and raise high level voltage of the clock.The primary charge pump used the transmission structure with raised gate voltage and the clock with enhanced drive capacity to charge and discharge the internal capacitor,improved the transmission capacity of the primary charge pump and the working efficiency of the overall circuit.Finally,the purpose of generating high voltage under low power voltage was realized.At the same time,the voltage regulator circuit was controlled by enable sequence to ensure the stability of the output voltage.Simulation results show that the charge pump is fast,small ripple and high efficiency.This dual-charge pump circuit has been applied to chip design and tapes out using 0.18μm EEPROM process.The output high voltage is stable and satisfies the design requirements with good performance.

关 键 词：双级电荷泵 振荡器 电平转换 

分 类 号：TN433[电子电信—微电子学与固体电子学]