类液晶作为高性能有机场效应晶体管的有源层  

Liquid crystal-like active layer for high-performance organic field-effect transistors

作　　者：王治芳 Daniel Martin-Jimenez 张莹莹 Miguel Wiche 刘拉程 Daniel Ebeling 仲启刚 Florian Fontein Andre Schirmeisen 黄丽珍 王滋 王文冲 迟力峰 Zhifang Wang;Daniel Martin-Jimenez;Yingying Zhang;Miguel Wiche;Lacheng Liu;Daniel Ebeling;Qigang Zhong;Florian Fontein;Andre Schirmeisen;Lizhen Huang;Zi Wang;Wenchong Wang;Lifeng Chi(Institute of Functional Nano&Soft Materials(FUNSOM),Jiangsu Key Laboratory for Carbon-Based Functional Materials&Devices,Soochow University,Suzhou 215123,China;Westfalische Wilhelms-Universitat Munster,Physikalisches Institut and Center for Nanotechnology(CeNTech),Wilhelm-Klemm-StraBe 10,48149 Munster,Germany;Institution Center for Soft Nanoscience,Busso-Peus-Strasse10,48149 Minster,Germany;Institute of Applied Physics(IAP)and Center for Materials Research(LaMa),Justus Liebig University GieBen,Heinrich-Buff-Ring 16,35392 GieBen,Germany;Gusu Laboratory of Materials,Suzhou 215123,China)

机构地区：[1]Institute of Functional Nano&Soft Materials(FUNSOM),Jiangsu Key Laboratory for Carbon-Based Functional Materials&Devices,Soochow University,Suzhou 215123,China [2]Westfalische Wilhelms-Universitat Munster,Physikalisches Institut and Center for Nanotechnology(CeNTech),Wilhelm-Klemm-StraBe 10,48149 Munster,Germany [3]Institution Center for Soft Nanoscience,Busso-Peus-Strasse10,48149 Minster,Germany [4]Institute of Applied Physics(IAP)and Center for Materials Research(LaMa),Justus Liebig University GieBen,Heinrich-Buff-Ring 16,35392 GieBen,Germany [5]Gusu Laboratory of Materials,Suzhou 215123,China

出　　处：《Science China Materials》2023年第4期1518-1526,共9页中国科学（材料科学（英文版）

基　　金：the financial support from the National Natural Science Foundation of China(51821002);the Collaborative Innovation Center of Suzhou Nano Science&Technology;the Deutsche Forschungsgemeinschaft(SFB 858 projects B3,the German-Chinese Transregional Collaborative Research Centre TRR 61/PAK 943);the Europ?ischer Fonds für regionale Entwicklung(EFRE)innovation laboratory for high performance materials(JLU);the National Key Research and Development Program of China(2018YFE0200700)。

摘　　要：高载流子迁移率和器件性能的一致性对于有机场效应晶体管在阵列和集成电路上的应用至关重要.然而,同时具备高性能和小批间差的方法当前仍然是个挑战.本论文在原子力显微镜和偏振荧光显微镜表征的基础上,报道了在PTCDI-C1_(3)分子模板上生长具有大晶畴的dif-TES-ADT类液晶状薄膜的方法.我们进一步将所获得的薄膜用作有机场效应晶体管的载流子传输通道,其饱和载流子迁移率高达1.62±0.26 cm^(2)V^(-1)s^(-1).更重要的是,在重复三个批次之间,每次50个器件的迁移率批间差仅为16%.这一发现为设计材料和器件结构以同时实现高载流子迁移率和器件均匀性提供了一种新思路.High carrier mobility and uniform device performance are of crucial importance for organic field-effect transistor(OFET)-based device and integrated circuit applications.However,strategies for achieving high device performance with small variations from batch to batch are still desired.Here,we report a thin liquid crystal-like film of 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene(difTES-ADT)grown on a N,N’-ditridecylperylene-3,4,9,10-tetracarboxylic diimide(PTCDI-C_(13))template,confirmed by atomic force microscopy and polarized fluorescence microscopy.The liquid crystal-like films with large crystalline domains are further employed as carrier transport channels for OFETs.As a result,we achieved high-performance OFETs with a saturation carrier mobility of 1.62±0.26 cm^(2)V^(-1)s^(-1)and a small variation of 16%among three batches.This finding provides a new strategy to design materials and device structures to simultaneously achieve high carrier mobility and device uniformity.

关 键 词：有机场效应晶体管 载流子迁移率 载流子传输 有源层 集成电路 器件性能 偏振荧光 原子力显微镜 

分 类 号：TN386[电子电信—物理电子学]