机构地区:[1]中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海200083 [2]上海科技大学信息科学与技术学院,上海201210
出 处:《红外与激光工程》2023年第3期12-26,共15页Infrared and Laser Engineering
基 金:国家自然科学基金(62104240,62204248)。
摘 要:单光子计数技术在弱信号探测和时间测距中具有重大的应用前景。自从20世纪70年代可见光的光子计数系统研发以来,国际上该领域内的研发小组在不断地发展完善光子计数技术,充分放大光子信号,以降低电子设备的读出噪声。电子倍增电荷耦合器件(Electron Multiplying Charge Coupled Devices,EMCCDs)具有更高的量子效率,可替代传统的可见光光子计数系统,但较大的雪崩噪声阻碍了倍增下入射光子数的准确获取。碲镉汞线性雪崩器件(HgCdTe APD)的过剩噪声因子接近1,几乎无过剩噪声;相对于盖革模式的雪崩器件,没有死时间和后脉冲,不需要淬灭电路,具有超高动态范围,光谱响应范围宽且可调,探测效率和误计数率可独立优化,开辟了红外波段光子计数成像的新应用领域,在天文探测、激光雷达、自由空间通信等应用中具有重要价值。美国雷神(Raytheon)公司和DRS技术公司、法国CEA/LETI实验室和Lynred公司、英国Leonardo公司先后实现了碲镉汞线性雪崩探测器的单光子计数。文中总结了欧美国家在碲镉汞光子计数型线性雪崩探测器研究方面的技术路线和研究现状,分析了吸收倍增分离型(Separation of Absorption and Magnification,SAM)、平面PIN型和高密度垂直集成型(High Density Vertically Integrated Photodiode,HDVIP)三种结构的HgCdTe APD器件性能、光子计数能力以及制备优缺点。雷神公司采用分子束外延(Molecular-Beam Epitaxy,MBE)方式制备了空穴倍增机制的SAM型短波HgCdTe APD器件,增益可达350,光子探测效率达95%以上,工作温度达180 K以上。DRS技术公司采用液相外延(Liquid Phase Epitaxy,LPE)碲镉汞材料制备了电子倍增机制的HDVIP型中波HgCdTe APD器件,在0.4~4.3μm的可见光到中红外波段都能响应,最高增益可达6100,光子探测效率大于70%,可实现110 Mbps的自由空间通信。CEA/LETI实验室和Lynred公司采用分子束外延或液相外延�Significance Single-photon counting has great application prospects in weak signal detection and time ranging.Since the first photon counting system in the visible spectrum was developed in the 1970s,in order to fully amplify the photon signal and reduce the readout noise of electronic equipments,many groups in the research field are constantly developing and improving the photon counting techniques.Electron multiplying charge coupled devices(EMCCDs)can replace the traditional visible light photon counting system and have higher quantum efficiency.While due to large avalanche noise,accurate acquisition of incident photon number under multiplication is difficult.The excess noise factor of mercury cadmium telluride avalanche photodiode(HgCdTe APD)is close to 1,there is almost no excess noise.Compared with the Geiger mode avalanche photodiodes,the linear mode HgCdTe APD has no dead time and after pulse,does not need to quench the circuit,has ultra-high dynamic range and adjustable spectrum with wide response range.Its detection efficiency and false count rate can be independently optimized.It opens up a new infrared photon band counting imaging application.It is of great value in astronomical exploration,laser radar,free space communication and other applications.Progress Raytheon and DRS Technologies in the United States,CEA/LETI Laboratory and Lynred in France,and Leonardo in the United Kingdom have successively realized single photon counting of linear HgCdTe APD detectors.This paper summarizes the technical routes and research status of linear mode photon counting HgCdTe APD detectors in Europe and America.The performance of HgCdTe APDs,photon counting ability and the advantages and disadvantages of detector preparation with three structures,namely,separation of absorption and amplification(SAM),planar PIN type and high density vertically integrated photodiode(HDVIP),are analyzed.Raytheon Company has prepared SAM short-wave HgCdTe APD detectors with hole multiplication mechanism by molecular beam epitaxy(MBE),wi
关 键 词:碲镉汞 光子计数 线性雪崩 光子探测效率 器件结构 过剩噪声
分 类 号:TN215[电子电信—物理电子学]
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