适用于低压同步整流器的新型谐振驱动电路  

Novel Resonant Driving Circuit for Low-voltage Synchronous Rectifier

作　　者：郭晓君 张杰[1,2] 林清华 林维明[3] GUO Xiaojun;ZHANG Jie;LIN Qinghua;LIN Weiming(School of Mechanical,Electrical&Information Engineering,Putian University,Putian 351100,China;Higher Educational Key Laboratory for New Energy Equipment Testing of Fujian Province,Putian 351100,China;College of Electrical Engineering and Automation,Fuzhou University,Fuzhou 350007,China)

机构地区：[1]莆田学院机电与信息工程学院,莆田351100 [2]新能源装备检测福建省高校重点实验室,莆田351100 [3]福州大学电气工程与自动化学院,福州350007

出　　处：《电源学报》2023年第2期12-20,共9页Journal of Power Supply

基　　金：福建省自然科学基金资助项目(2017J01711);莆田学院引进人才科研启动费项目(2019009)。

摘　　要：随着开关频率的提高,同步整流变换器功率MOSFET管的开关过程及其驱动带来的损耗也愈发凸显出来,特别是在低压大电流应用中。为了降低这部分损耗,提出一种单电感双管谐振驱动技术,能够利用一个单电感驱动两个不共源极的功率MOSFET管。详细分析了工作原理和特性,给出了参数设计方法,并进行了仿真和实验,结果表明该驱动技术具有驱动损耗低、驱动速度快、抗干扰能力强、便于集成等优点,适用于高频高功率密度的同步整流功率变换器。The losses caused by the switching process of a power MOSFET in a synchronous rectifier and its driving circuit are increasingly prominent with the increase of switching frequency,especially in the low-voltage and high-current applications.To solve this problem,a single-inductor resonant driving circuit for dual MOSFETs is proposed in this paper,which can use a single inductor to drive the dual power MOSFETs with non-common sources.The operation principle and characteristics of the circuit are analyzed in detail,and the parameter design method is given as well.In addition,simulation and experimental verifications were carried out.Results show that the driving circuit has advantages such as a low driving loss,a fast driving speed,a strong anti-interference capability and easy integration,which is suitable for synchronous rectifiers with high frequency and high power density.

关 键 词：同步整流器 驱动损耗 功率MOSFET管 谐振驱动电路 高频 

分 类 号：TM46[电气工程—电器]