考虑弛豫效应的SiC MOSFET阈值电压测量方法研究  

Threshold Voltage Measurement Method of SiC MOSFET Considering the Hysteresis Effect

作　　者：王臻卓[1] 任婷婷[2] WANG Zhenzhuo;REN Tingting(Teaching Affairs Office,Henan Polytechnic Institute,Nanyang He’nan 473000,China;School of Electric Power and Architecture,Shanxi University,Taiyuan Shanxi 030000,China)

机构地区：[1]河南工业职业技术学院教务处,河南南阳473000 [2]山西大学电力与建筑学院,山西太原030000

出　　处：《电子器件》2023年第1期74-78,共5页Chinese Journal of Electron Devices

基　　金：河南省科技攻关项目(212102310086)。

摘　　要：碳化硅(SiC)MOSFET栅极氧化层中的陷阱造就了其独特的阈值电压弛豫效应的特性,使得SiC MOSFET的阈值电压定义和测量成为一个棘手的问题。首先基于弛豫效应的饱和现象,提出了“预偏置+测量”组合的测量方法,一共需要测量两次阈值电压,以确定阈值电压漂移的上下限,并以其平均值定义为阈值电压。然后设计实验测量电路,对某型号SiC MOSFET器件在不同预偏置条件下进行实验测量,分析预偏置电压和脉冲持续时间对测量结果的影响,结果表明合理选择预偏置阶段的实验条件可以确保弛豫效应达到饱和,并可得到重复性的阈值电压测量结果。The traps in the gate oxide layer of silicon carbide(SiC)MOSFET create the corresponding unique threshold voltage hysteresis effect,making the definition and measurement of the threshold voltage of SiC MOSFET a difficult task.Based on the saturation phenom-enon of the hysteresis effect,a“pre-bias+measurement”combined measurement method is proposed.It is necessary to measure the threshold voltage twice to determine the upper and lower limits of the threshold voltage drift,and the average value is defined as the threshold voltage.An experimental measurement circuit is designed to perform the experimental measurements on a certain type of SiC MOSFET device under different pre-bias conditions to analyze the influence of pre-bias voltage and pulse duration on the measurement results.The experimental results show that a reasonable choice of the pre-bias conditions can ensure that the hysteresis effect is saturat-ed,and reproducible threshold voltage measurement results can be obtained.

关 键 词：SiC MOSFET 阈值电压测量 弛豫效应 预偏置条件 

分 类 号：TM464[电气工程—电器]