金属元素共掺杂对AgSnO_(2)触头材料性能的影响研究  

Study on the Influence of Metal Co-doping on the Material Properties of AgSnO_(2) Contacts

作　　者：陈曦 徐雄军[2] 程思远 CHEN Xi;XU Xiongjun;CHENG Siyuan(Electric and New Energy Institute,China Three Gorges University,Hubei Yichang 443002,China;Operation and Maintenance Department,State Grid Xiaogan Power Supply Company,Hubei Xiaogan 442000,China)

机构地区：[1]三峡大学电气与新能源学院,湖北宜昌443002 [2]国网孝感供电公司,湖北孝感442000

出　　处：《电工材料》2023年第2期27-31,35,共6页Electrical Engineering Materials

摘　　要：AgSnO_(2)触头材料环保无毒且具备良好的耐电弧以及抗熔焊能力,所以目前已经广泛作为低压开关触头材料,但是自身的导电性能还有待提高。采用金属共掺杂的方式对SnO_(2)的导电性能进行改良。运用CASTEP软件对元素掺杂前后SnO_(2)的各项性能进行了仿真试验。结果表明:当进行Cu元素单掺杂时,晶胞体积有小幅度增加;进行Ge元素单掺杂时,晶胞体积小幅度缩减;但当把两种金属元素掺杂到一起时,晶胞体积会处于本征SnO_(2)与Ge元素两种元素单独掺杂之间;金属元素掺杂时其形成能均为负值且其绝对值均大于本征SnO_(2),证明在SnO_(2)材料中加入金属元素能够有效地提高其稳定性;通能带图显示,金属元素掺杂后,晶胞的禁带宽度有不同程度的减小,其中Cu-Ge共掺杂的晶胞禁带宽度值最小,仅为0.268 eV,这意味着电子更容易从价带迁移到导带,此时导电性也最好。共掺杂降低了费米能级附近的峰值和局域性,并且由于原子之间更强的成键结合力而使SnO_(2)材料更稳定。AgSnO_(2) contact material is environmentally friendly,non-toxic and has good arc resistance and melting welding resistance,so it has been widely used as a low-voltage switch contact material,but its own electrical conductivity needs to be improved.In this paper,the electrical conductivity of SnO_(2) was improved by metal co-doping.The properties of SnO_(2) before and after doping were simulated by using CASTEP software.The results show that the cell volume increases slightly when Cu is single doped.The cell size was reduced slightly during Ge single doping experiment.However,when the two metal elements are doped together,the cell volume will be between the intrinsic SnO_(2) and Ge elements.The formation energy of SnO_(2) is negative and its absolute value is greater than that of intrinsic SnO_(2),which proves that adding metal elements into SnO_(2) can effectively improve its stability.The band-gap diagram shows that after metal doping,the band gap of the cell decreases to different degrees,among which,the band gap of the Cu-Ge co-doped cell is the smallest,only 0.268 eV,which means that electrons are more easily transferred from the va·lence band to the conduction band,and the conductivity is the best at this time.Co-doping reduces the peak and local region near the Fermi level and makes SnO_(2) materials more stable due to stronger bonding forces between atoms.

关 键 词：AgSnO_(2)电触头材料 形成能 元素掺杂 费米能级 导电性 

分 类 号：TM503[电气工程—电器]