新型GaN与ZnO衬底ScAlMgO_(4)晶体的研究进展  

Research Progress of ScAlMgO_(4)Crystal:a Novel GaN and ZnO Substrate

作　　者：张超逸 唐慧丽[1] 李宪珂 王庆国[1] 罗平[1] 吴锋[1] 张晨波 薛艳艳 徐军[1] 韩建峰 逯占文 ZHANG Chaoyi;TANG Huili;LI Xianke;WANG Qingguo;LUO Ping;WU Feng;ZHANG Chenbo;XUE Yanyan;XU Jun;HAN Jianfeng;LU Zhanwen(MOE Key Laboratory of Advanced Micro-Structured Materials,School of Physics Science and Engineering,Tongji University,Shanghai 200092,China;Linton Kayex Technology Co.,Ltd.,Wuxi 214000,China)

机构地区：[1]同济大学物理科学与工程学院,先进微结构材料教育部重点实验室,上海200092 [2]连城凯克斯科技有限公司,无锡214000

出　　处：《无机材料学报》2023年第3期228-242,共15页Journal of Inorganic Materials

基　　金：国家自然科学基金(52032009,61621001,62075166)。

摘　　要：二十一世纪以来,以氮化镓(GaN)和氧化锌(ZnO)为代表的第三代宽禁带(Eg>2.3 eV)半导体材料正成为半导体产业发展的核心支撑材料。由于GaN与ZnO单晶生长难度较大,成本较高,常采用外延技术在衬底材料上生长薄膜,因此寻找理想的衬底材料成为发展的关键。相比于传统的蓝宝石、6H-SiC、GaAs等衬底材料,铝镁酸钪(ScAlMgO_(4))晶体作为一种新型自剥离衬底材料,因其与GaN、ZnO具有较小的晶格失配(失配率分别为~1.4%和~0.09%)以及合适的热膨胀系数而备受关注。本文从ScAlMgO_(4)晶体的结构出发,详细介绍了其独特的三角双锥配位体结构与自然超晶格结构,这是其热学性质与电学性质的结构基础。此外,ScAlMgO_(4)晶体沿着c轴的层状结构使其具有自剥离特性,大大降低了生产成本,在制备自支撑GaN薄膜方面具有良好的市场应用前景。然而ScAlMgO_(4)原料合成难度较大,晶体生长方法单一,主要为提拉法,且与日本存在较大的差距,亟需开发新的高质量、大尺寸ScAlMgO_(4)晶体的生长方法来打破技术壁垒。Since the beginning of the 21st century,the third–generation wide band gap(Eg>2.3 eV)semiconductor materials represented by gallium nitride(GaN)and zinc oxide(ZnO)are becoming the core supporting materials for development of semiconductor industry.Due to difficult growth and high cost of GaN and ZnO single crystal,epitaxial technology is always used as the substrate materials to grow GaN and ZnO films.Therefore,it is crucial to find an ideal substrate material for the development of third generation semiconductor.Compared with traditional substrate materials,such as sapphire,6H-SiC and GaAs,scandium magnesium aluminate(ScAlMgO_(4))crystal,as a new self-peeling substrate material,has attracted much attention because of its small lattice mismatch rate(~1.4%and~0.09%,respectively)and suitable thermal expansion coefficient with GaN and ZnO.In this paper,based on structure of ScAlMgO_(4) crystal,the unique trigonal bipyramid coordination and natural superlattice structure,the basis for its thermal and electrical properties,are introduced in detail.In addition,the layered structure of ScAlMgO_(4) crystal along the c-axis makes it self-peeling,which greatly reduces its preparation cost and has a good application prospect in the preparation of self-supported GaN films.However,the raw material of ScAlMgO_(4) is difficult to synthesize,and the crystal growth method is single,mainly through the Czochralski method(Cz),and growing techniques now in China lag far behind that in Japan.Therefore,it is urgent to develop a new growth method of growing high quality and large size ScAlMgO_(4) crystals to break the technical barriers.

关 键 词：ScAlMgO_(4) 自剥离衬底 晶格匹配 晶体生长 外延 综述 

分 类 号：TQ174[化学工程—陶瓷工业]