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作 者:Xuedi Zhang Jin Chen Han Zhang Pengfei Zhu Rong Wang Fu Li Bo Li
机构地区:[1]Institute of Materials Research,Tsinghua Shenzhen International Graduate School,Shenzhen,518055,China [2]School of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen,518055,China [3]School of Materials Science and Engineering,Tsinghua University,Beijing,100084,China
出 处:《Journal of Materiomics》2023年第2期328-337,共10页无机材料学学报(英文)
基 金:supported by the National Natural Science Foundation of China(No.52072248);Natural Science Foundation of Guangdong Province of China(No.2021A1515012128,No.2018A030313574);Natural Science Foundation of SZU(No.827-000357);Science and Technology Plan of Shenzhen City(Grant No.JCYJ20190813171603633).
摘 要:Bi_(2)Te_(3)-based materials were prepared by direct ink writing(DIW)3D printing and their microstructure and thermoelectric properties were investigated with an emphasis on the effect of the content of DMF and Te/Se addition.As the mass ratio of DMF in the composition increased from 6.5%to 8.0%(in mass),the electrical conductivity deteriorated because of the corresponding increased porosity and organic remains in the samples.However,the volatilization of DMF would reduce the fluidity of the slurry.Thus,thermoelectric slurry with 7.0%DMF is the most suitable mass ratio for 3D printing.Additionally,adding Te in the p-type Bi0.4Sb1.6Te3 and adding Se in the n-type Bi2Te2.6Se0.4 have significantly improved their electrical conductivity due to the increased carrier concentration and mobility.Combining with the moderate Seebeck coefficient(~200 mV/K),high power factors with~802 mW·m^(-1)·K^(-2)and 1266 mW·m^(-1)·K^(-2)were obtained for the n-type Bi_(2)Te_(2.6)Se_(0.4)þ10%Se and p-type Bi_(0.4)Sb_(1.6)Te_(3)þ7%Te,respectively,which result in the final relatively high zT values of 0.68 at 573 K and 0.56 at 330 K for ntype and p-type 3D-printed samples.
关 键 词:3D-printing Bi_(2)Te_(3) Thermoelectric materials
分 类 号:TB34[一般工业技术—材料科学与工程]
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