2~18 GHz GaAs超宽带低噪声放大器MMIC  

2-18 GHz GaAs Ultra-Wideband Low Noise Amplifier MMIC

作　　者：李士卿 何庆国[1] 戴剑[1] Li Shiqing;He Qingguo;Dai Jian(The 13^(th)Research Institute,CETC,Shijazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2023年第3期224-230,共7页Semiconductor Technology

摘　　要：基于90 nm GaAs赝配高电子迁移率晶体管(PHEMT)工艺设计并制备了一款2~18 GHz的超宽带低噪声放大器(LNA)单片微波集成电路(MMIC)。该款放大器具有两级共源共栅级联结构,通过负反馈实现了超宽带内的增益平坦设计。在共栅晶体管的栅极增加接地电容,提高了放大器的高频输出阻抗,进而拓宽了带宽,提高了高频增益,并降低了噪声。在片测试结果表明,在5 V单电源电压下,在2~18 GHz内该低噪声放大器小信号增益约为26.5 dB,增益平坦度小于±1 dB,1 dB压缩点输出功率大于13.5 dBm,噪声系数小于1.5 dB,输入、输出回波损耗均小于-10 dB,工作电流为100 mA,芯片面积为2 mm×1 mm。该超宽带低噪声放大器可应用于雷达接收机系统中,有利于接收机带宽、噪声系数和体积等的优化。A 2-18 GHz ultra-wideband low noise amplifier(LNA)monolithic microwave integrated circuit(MMIC)was designed and fabricated by using 90 nm GaAs pseudomorphic high electron mobility transistor(PHEMT)process.The gain flatness of the LNA in ultra-wideband was achieved by two-stage cascode topology and negative feedback structure.A capacitor to ground was added to the gate of commom-gate transistor,which improved the output impedance at high frequency and then widened the bandwidth,improved the high frequency gain,and reduced the noise.The on-wafer test results show that at 2-18 GHz and a single power supply of 5 V,the small signal gain of the LNA is about 26.5 dB,the gain flatness is less than±1 dB,the output power at 1 dB compression point is greater than 13.5 dBm,the noise figure is less than 1.5 dB,the input and the output return losses are both less than-10 dB,and the operation current is 100 mA.The LNA chip size is 2 mm×1 mm.The ultra-wideband LNA can be applied in radar receiver systems,which is beneficial to optimize the bandwidth,noise figure and size of the receiver.

关 键 词：砷化镓(GaAs) 赝配高电子迁移率晶体管(PHEMT) 单片微波集成电路(MMIC) 低噪声放大器(LNA) 共源共栅 超宽带 

分 类 号：TN43[电子电信—微电子学与固体电子学] TN722.16