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作 者:王天文 高卫民 徐菊[2,3] 徐红艳 Wang Tianwen;Gao Weimin;Xu Ju;Xu Hongyan(School of Materials and Mechanical&Electrical Engineering,Jiangxi Science and Technology Normal University,Nanchang 330038,China;Institute of Electrical Engineering,Chinese Academy of Sciences,Bejing 100190,China;University of Chinese Academy of Sciences,Beijing 100049,China)
机构地区:[1]江西科技师范大学材料与机电学院,南昌330038 [2]中国科学院电工研究所,北京100190 [3]中国科学院大学,北京100049
出 处:《半导体技术》2023年第3期240-246,254,共8页Semiconductor Technology
摘 要:提出了一种用于焊接半导体芯片的新型焊接材料Cu@Sn@Ag焊片。对比分析了Cu@Sn@Ag焊片和商用PbSn5Ag2.5焊片焊层的孔隙率和力学性能,采用这两种焊片封装了110 A商用Si器件并对其进行了电学、热学性能和功率循环可靠性对比。结果表明:优化后的Cu@Sn@Ag焊片孔隙率小于4%,焊层剪切强度平均值约为35 MPa;相应器件的最小热阻为0.18 K/W,且经过150000次的有源功率循环(温差为60℃)后正向压降增长率基本小于2%,Cu@Sn@Ag焊片的性能和器件功率循环可靠性高于商用PbSn5Ag2.5焊片。基于瞬态液相扩散焊接(TLPS)的Cu@Sn@Ag焊片可以实现高铅焊片的无铅化替代,是一种具有良好应用前景的耐高温芯片焊接材料。A novel welding material Cu@Sn@Ag preform for semiconductor chip soldering was presented.The porosity and mechanical properties of Cu@Sn@Ag and commercial PbSn5Ag2.5 preform joints were comparatively analyzed.In addition,110 A commercial Si device was packaged based on these two kinds of preform and its electrical,thermal performance and power cycle reliability were investigated comparatively.The results show that the porosity is within 4%,the average shear strength is 35 MPa and the minimum thermal resistance of the device using optimized Cu@Sn@Ag preform is 0.18 K/W.Also the growth rate of the forward voltage drop value is basically less than 2%after 150000 active power cycles(junction temperature difference is 60℃).The performance and power cycle reliability of Cu@Sn@Ag preform are higher than those of commercial PbSn5Ag2.5 preform.The Cu@Sn@Ag preform based on transient liquid phase diffusion soldering(TLPS)technology can be a promising alternative to lead-free solder.In addition,it is also a high temperature resistant chip soldering material with great application prospects.
关 键 词:Cu@Sn@Ag焊片 瞬态液相扩散焊接(TLPS) 功率器件 剪切强度 功率循环
分 类 号:TN305.94[电子电信—物理电子学]
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