金属氧化物半导体的界面结构表征与调控  

Interfacial Structural Characterization and Modulation in Metal Oxide Semiconductors

作　　者：蒋仁辉 李佩 孟琪 李雷[2] 赵培丽 贾双凤 郑赫 王建波 JIANG Renhui;LI Pei;MENG Qi;LI Lei;ZHAO Peili;JIA Shuangfeng;ZHENG He;WANG Jianbo(School of Physics and Technology,Center for Electron Microscopy,MOE Key Laboratory of Artificial Micro-and Nano-Structures,and Institute for Advanced Studies,Wuhan University,Wuhan 430072,China;Core Facility of Wuhan University,Wuhan 430072,China;Suzhou Institute of Wuhan University,Suzhou 215123,China;Wuhan University Shenzhen Research Institute,Shenzhen 518057,China)

机构地区：[1]武汉大学物理科学与技术学院电子显微镜中心人工微结构教育部重点实验室和高等研究院,湖北武汉430072 [2]武汉大学科研公共服务条件平台,湖北武汉430072 [3]武汉大学苏州研究院,江苏苏州215123 [4]武汉大学深圳研究院,广东深圳518057

出　　处：《中国材料进展》2023年第3期198-204,214,共8页Materials China

基　　金：国家自然科学基金资助项目(52071237,12074290,51871169,52101021,12104345);江苏省自然科学基金资助项目(BK20191187);深圳市科创委基础研究面上项目(JCYJ20190808150407522);中国博士后科学基金资助项目(2019M652685)。

摘　　要：界面对材料的力学、热学、电学、磁学和催化等方面的性能有着十分重要的影响,因此界面的原子结构解析和构建对材料的性能调控具有重要的意义。作者课题组利用透射电子显微技术对金属氧化物的界面原子结构进行表征,利用电场、电子束辐照和应力场诱导结构相变并探讨了相界面调控的可能性:(1)在Na_(0.36)WO_(3.14)样品中发现了旋转畴结构,通过施加电场构建了Na_(0.36)WO_(3.14)相与Na_(0.48)WO_(3)相的复合相界面;(2)从原子尺度揭示了Na_(0.5)WO_(3.25)与Na_(x)WO_(3)相界面的形成过程;(3)阐明了拉伸应力作用下ZnO纳米桥从纤锌矿(WZ)结构到h-MgO结构的可逆相变机理,研究了在压应力作用下,CuO纳米线中由于氧空位迁移引起的Cu_(3)O_(2)相的形核,进一步探讨了Cu_(3)O_(2)与CuO相界面的演变过程。作者基于上述实验结果和近期工作对金属氧化物半导体界面的结构表征和调控进行了综述,希望为金属氧化物半导体的结构和性能调控提供参考。Interfaces have important effects on the mechanical,thermal,electrical,magnetic,and catalytic properties of materials.Therefore,the analysis of atomic structure of the interface and the study of interface construction are of great significance to control the properties of materials.In this paper,the interfacial atomic structures of metal oxides were characterized by transmission electron microscopy.The phase transitions induced by electric field,electron beam irradiation and mechanical stress were presented,based upon which the possible phase boundary engineering was discussed.(1)The rotational domain structures were found in the Na_(0.36)WO_(3.14) sample,and the Na_(0.36)WO_(3.14)/Na_(0.48)WO_(3) phase boundary was created by applying an electric field.(2)The formation process of the Na_(0.5)WO_(3.25)/Na_(x)WO_(3) interface was revealed at the atomic scale.(3)The reversible phase transformation mechanism from wurtzite(WZ)to h-MgO structure in ZnO nanobridges under tensile stress was elucidated.Additionally,the nucleation of Cu_(3)O_(2) phase due to the oxygen vacancy migration in CuO nanowires under compressive stress was studied,and the Cu_(3)O_(2)/CuO phase boundary evolution mechanism was further discussed.The authors present this review on the structural characterization and modulation of metal oxide semiconductor interfaces based on the recent work,hoping to provide a reference for the structure and property modulation in metal oxide semiconductors.

关 键 词：金属氧化物 畴 相界 原位 相变 

分 类 号：TN304.21[电子电信—物理电子学] TG115.215[金属学及工艺—物理冶金]