蔡氏结型忆阻器的简化及其神经元电路的硬件实现  

Simplification of Chua corsage memristor and hardware implementation of its neuron circuit

作　　者：郭慧朦 梁燕 董玉姣 王光义[1] Guo Hui-Meng;Liang Yan;Dong Yu-Jiao;Wang Guang-Yi(School of Electronic Information,Hangzhou Dianzi University,Hangzhou 310018,China)

机构地区：[1]杭州电子科技大学电子信息学院,杭州310018

出　　处：《物理学报》2023年第7期21-33,共13页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:62171173,61771176);浙江省自然科学基金(批准号:LY20F010008)资助的课题.

摘　　要：蔡氏结型忆阻器(Chua corsage memristor,CCM)属于压控型局部有源忆阻器,具有复杂的动力学行为,在神经形态计算领域具有潜在的应用价值.根据静态电压-电流特性曲线,CCM可分为二翼、四翼和六翼型.本文基于神经形态行为的产生机制,将CCM的数学模型进行简化,简化后的模型表达式中无绝对值符号,且小信号等效电路的导纳函数与简化前完全相同.进一步采用简化的CCM模型与电容和电感元件相连,构建了三阶神经元电路.利用局部有源、混沌边缘、及李雅普诺夫指数等理论分析方法,预测了该神经元电路产生神经形态行为的参数域.根据简化的CCM数学模型,采用运算放大器、乘法器、电阻和电容等常用电路元件构建了该忆阻器的电路仿真器,并连接电容和电感进一步给出了神经元电路的硬件实现.实验结果表明该神经元电路可以产生丰富的神经形态行为,包括静息状态、周期尖峰、混沌状态、双峰响应、周期振荡现象、全或无现象和尖峰簇发现象.The Chua corsage memristor(CCM)is a voltage-controlled locally-active memristor,which has complex dynamic behaviors and potential applications in the field of neuromorphic computing.According to the DC V-I plot,the CCM can be classified as two-lobe,four-lobe,and six-lobe type.By analyzing their non-volatility and local activity,it is found that they have the same locally-active region and a common stable equilibrium.The mathematical models of the three CCMs are simplified based on the mechanism of neuromorphic behavior,namely,local activity.After the model simplification,the absolute value operation disappears,but the locally-active domain remains unchanged.For the simplified CCM,its small-signal equivalent circuit at the locally-active operating point is established,which is consistent with CCMs before being simplified.Hence,the model simplification does not change the small-signal characteristics of CCMs.To further investigate the application of voltage-controlled locally-active memristor in modeling the neuromorphic behavior of neurons,the simplified CCM model is used to connect a capacitor and an inductor to construct a third-order neuron circuit.By applying theoretical analysis methods such as local activity,edge of chaos,and Lyapunov exponents,we predict the parameter domains where different neuromorphic behaviors are generated.The distribution of neuromorphic behaviors is described on a dynamic map determined by the parameters of applied voltage VD and external inductance L.When the memristor is biased in the locally-active region,the system response changes among resting state,periodic spiking oscillation,and chaotic behaviors.Finally,according to the simplified CCM mathematical model,the corresponding emulator circuit is designed by using three operational amplifiers,two multipliers,a current conveyor,and several resistors and capacitors.Based on the presented memristor emulator circuit,the hardware implementation of the neuron circuit is given.The experimental results verify the correctness and feasibil

关 键 词：忆阻器 局部有源 神经元电路 混沌 硬件实现 

分 类 号：TN60[电子电信—电路与系统]