MoSe_(2)/WS_(2) heterojunction photodiode integrated with a silicon nitride waveguide for near infrared light detection with high responsivity  

作　　者：Rivka Gherabli S.R.K.C.Indukuri Roy Zektzer Christian Frydendahl Uriel Levy 

机构地区：[1]Department of Applied Physics,The Faculty of Science,The Center for Nanoscience and Nanotechnology,The Hebrew University of Jerusalem,Jerusalem,91904,Israel

出　　处：《Light(Science & Applications)》2023年第3期456-464,共9页光（科学与应用)（英文版）

摘　　要：We demonstrate experimentally the realization and the characterization of a chip-scale integrated photodetector for the near-infrared spectral regime based on the integration of a MoSe_(2)/WS_(2) heterojunction on top of a silicon nitride waveguide.This configuration achieves high responsivity of~1 A W−1 at the wavelength of 780 nm(indicating an internal gain mechanism)while suppressing the dark current to the level of~50 pA,much lower as compared to a reference sample of just MoSe_(2) without WS_(2).We have measured the power spectral density of the dark current to be as low as~1×10^(−12) A Hz−0.5,from which we extract the noise equivalent power(NEP)to be~1×10^(−12) W Hz^(−0.5).To demonstrate the usefulness of the device,we use it for the characterization of the transfer function of a microring resonator that is integrated on the same chip as the photodetector.The ability to integrate local photodetectors on a chip and to operate such devices with high performance at the near-infrared regime is expected to play a critical role in future integrated devices in the field of optical communications,quantum photonics,biochemical sensing,and more.

关 键 词：HETEROJUNCTION WAVEGUIDE RESONATOR 

分 类 号：TN312.8[电子电信—物理电子学]