基于磁斯格明子的器件设计研究进展  

Research Progress of Device Design Based on Magnetic Skyrmions

作　　者：赵国平[1,2] ZHAO Guoping(College of Physics and Electronic Engineering,Sichuan Normal University,Chengdu 610101,Sichuan;Center for Magnetism and Spintronics,Sichuan Normal University,Chengdu 610101,Sichuan)

机构地区：[1]四川师范大学物理与电子工程学院,四川成都610101 [2]四川师范大学磁学与自旋电子学研究中心,四川成都610101

出　　处：《四川师范大学学报（自然科学版）》2023年第3期285-296,F0002,共13页Journal of Sichuan Normal University（Natural Science）

基　　金：国家自然科学基金(51771127、52171188和52111530143);四川省中央引导地方科技发展专项项目(2021ZYD0025)。

摘　　要：磁斯格明子是一种纳米级的拓扑自旋结构,由于其具有较好的稳定性、奇特的动力学特性以及较低的能耗,有望应用于未来超高密度存储和自旋电子器件而被磁学和自旋电子学领域高度关注.自2009年首次被观测到以来,人们对磁斯格明子的宿主材料体系、产生条件以及调控方式等方面进行了大量研究.过去对磁斯格明子的研究重点主要集中在基础科学上,然而近年来逐渐从基础科学向实际应用转变.重要的是,许多基于磁斯格明子的自旋电子器件已经被设计出来,并引起了人们的极大兴趣.主要介绍近几年来磁斯格明子器件的最新研究进展,其中包括赛道存储器件、逻辑运算器件、类晶体管器件、二极管器件、纳米振荡器以及类脑器件等.此外,根据磁斯格明子的特性,总结其在不同自旋电子器件中的应用,并预测未来磁斯格明子自旋电子器件的发展趋势.Magnetic skyrmions are nanosized topological spin structures,which have attracted great attention in the fields of magnetism and spintronics.Due to their good stability,unique dynamic properties and lower energy consumption,they are expected to be used in ultra-high density storage and spintronic devices in the future.Since the magnetic skyrmions were observed in 2009,a large number of studies have been carried out,including the host material systems,generation conditions and manipulation methods.Most studies in the past mainly focused on the basic sciences of skyrmions,which,however,changes gradually from the basic sciences to practical applications in recent years.Importantly,many spintronic devices based on magnetic skyrmions have been designed and have aroused great interests.In this paper,we introduce the latest research progress of magnetic skyrmion devices,including racetrack memory,logic calculation,transistor,diode,nano-oscillator and neuron devices.In addition,we summarize the applications in different spintronic devices according to the properties of skyrmions and predict the development trend of magnetic skyrmionic devices in the future.

关 键 词：磁斯格明子 拓扑自旋结构 自旋电子器件 

分 类 号：O469[理学—凝聚态物理]