Mid-infrared plasmonic silicon quantum dot/HgCdTe photodetector with ultrahigh specific detectivity  

作　　者：Yueying CUI Zhouyu TONG Xinlei ZHANG Wenhui WANG Weiwei ZHAO Yuanfang YU Xiaodong PI Jialin ZHANG Zhenhua NI 

机构地区：[1]School of Physics and Key Laboratory of MEMS of Ministry of Education,Southeast University,Nanjing 211189,China [2]State Key Laboratory of Silicon Materials,School of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China

出　　处：《Science China(Information Sciences)》2023年第4期282-288,共7页中国科学（信息科学）（英文版）

基　　金：supported by National Key Research and Development Program of China(Grant No.2017YFA0205700);National Natural Science Foundation of China(Grant No.61927808);Strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XDB30000000);China Postdoctoral Science Foundation(Grant Nos.2022T150121,2021M690625);Jiangsu Planned Projects for Postdoctoral Research Funds(Grant No.2021K106B)。

摘　　要：Highly sensitive photodetectors operating at mid-infrared(MIR)wavelengths are urgently required for the applications of astronomy,optical communication,security monitoring,and so forth.However,further promoting the sensitivity in conventional MIR devices for a higher detectivity is challenging.Among the potential strategies,integrating localized surface plasmon resonance with MIR semiconductors is a promising approach to developing high-performance optoelectronics.Here we demonstrate a high-sensitivity boron(B)-doped silicon quantum dot(Si-QD)/HgCdTe(MCT)MIR photodetector.Because of plasmon-induced hot-hole tunneling and enhanced light absorption,the hybrid photodetector exhibits a high specific detectivity of~1.6×10^(9)cm·Hz^(1/2)·W-1(Jones)and a high-speed response(~224 ns for the rise time and~580 ns for the fall time)at room temperature.Furthermore,the device achieves high-performance spectral blackbody detection with a peak detectivity of up to 1.6×10^(11)Jones at~5.8μm under a cryogenic environment of 77 K,higher than that of bare MCT.This prominent enhancement can be attributed to the further suppression of hot-hole cooling due to a reduced phonon population at low temperatures,which facilitates more efficient hot-carrier extraction and contributes to ultrahigh sensitivity.The plasmonic material-integrated MCT architecture can pave the way for developing high-performance MIR photodetection.

关 键 词：doped silicon quantum dots HGCDTE localized surface plasmon resonance hot-hole tunneling mid-infrared photodetector 

分 类 号：TN215[电子电信—物理电子学]