Hf_(0.5)Zr_(0.5)O_(2)1T–1C FeRAM arrays with excellent endurance performance for embedded memory  

作　　者：Wenwu XIAO Yue PENG Yan LIU Huifu DUAN Fujun BAI Bing YU Qiwei REN Xiao YU Genquan HAN 

机构地区：[1]School of Microelectronics,Xidian University,Xi'an 710071,China [2]Xi'an UniIC Semiconductors,Xi'an 710071,China [3]Research Center for Intelligent Chips,Zhejiang Lab,Hangzhou 311121,China [4]Hangzhou Institute of Technology,Xidian University,Hangzhou 311200,China

出　　处：《Science China(Information Sciences)》2023年第4期299-300,共2页中国科学（信息科学）（英文版）

基　　金：supported by National Key Research and Development Project(Grant No.2018YFB2200500);National Natural Science Foundation of China(Grant Nos.62025402,62090033,91964202,92064003,61874081,62004149);Key Research Project of Zhejiang Lab(Grant No.2021MD0AC01)。

摘　　要：Since the initial report of HfO2-based ferroelectric films in 2011,great attention has been paid to ferroelectric field-effect transistors and ferroelectric random-access memories(FeRAMs)[1–3].Up to now,many efforts have been devoted to realizing the industrialization of HfO2-based FE films.However,the limited fatigue performance has always been the main problem to be resolved.

关 键 词：FERROELECTRIC ARRAYS performance 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]