低辐射薄膜中Ag层前后介质对膜层电学性能的影响  

Influence of Dielectric before and after Ag Layer on Electrical Properties of Low-E Film

作　　者：周枫 ZHOU Feng(Xinyi Glass(Wuhu)Company Limited,Wuhu 241000,China)

机构地区：[1]信义节能玻璃(芜湖)有限公司,芜湖241000

出　　处：《玻璃》2023年第4期22-25,共4页Glass

摘　　要：银在低辐射镀膜玻璃中起着举足轻重的作用,银层的生长质量也决定了低辐射镀膜玻璃产品电学性能的差异。通过研究银层前后材料,在保证银层厚度不变的前提下研究材料变化对膜层整体电学性能的影响,从而反应银层生长质量的好坏。结果表明,结构为ZnSnO/ZnO/Ag/ZnO/ZnSnO时,其膜层的电学性质最为优异。Silver plays an important role in Low-E coated glass,and the growth quality of silver layer also determines the difference of electrical properties of Low-E coated glass products.By studying the materials before and after the Ag layer,the effect of material changes on the overall electrical properties of the film is studied under the premise of keeping the thickness of the Ag layer unchanged,so as to reflect the quality of the growth of the Ag layer.The results show that when the structure is ZnSnO/ZnO/Ag/ZnO/ZnSnO,the electrical properties of the film are the best.

关 键 词：低辐射镀膜玻璃 银层生长 电学性质 

分 类 号：TQ171[化学工程—玻璃工业]