硅异质结太阳能电池用透明导电氧化物薄膜的研究现状及发展趋势  

Current Situation and Development Trend of Transparent Conductive Oxide Films on Silicon Heterojunction Solar Cells

作　　者：夏鹏 傅萍 黄金华[2] 李佳[2] 宋伟杰[2] XIA Peng;FU Ping;HUANG Jinhua;LI Jia;SONG Weijie(School of Materials Science and Chemical Engineering,Ningbo University,Ningbo 315211,Zhejiang,China;Ningbo Institute of Materials Technology&Engineering,Chinese Academy of Sciences,Ningbo 315201,Zhejiang,China)

机构地区：[1]宁波大学材料科学与化学工程学院,浙江宁波315211 [2]中国科学院宁波材料技术与工程研究所,浙江宁波315201

出　　处：《材料导报》2023年第9期1-9,共9页Materials Reports

基　　金：企业合作项目。

摘　　要：硅异质结(SHJ)太阳能电池是目前光伏产业中的重要组成部分,其由于具有高开路电压(V_(oc))等优点而引起了广泛的关注。在硅异质结太阳能电池中,透明导电氧化物(TCO)薄膜层的光学性能和电学性能分别影响着电池的短路电流(J_(sc))、填充因子(FF),进而影响电池的转换效率。近年来,SHJ电池中TCO层的研究主要集中于掺杂的In 2O 3和ZnO体系。本文从硅异质结太阳能电池的不同结构出发,概述了TCO薄膜的光电性能(透过率、禁带宽度、方块电阻、载流子浓度、迁移率和功函数)以及与相邻层的接触对电池性能的影响,介绍了不同体系的透明导电氧化物薄膜在硅异质结太阳能电池中的应用及研究现状,并展望其未来的发展趋势。S ilicon heterojunction(SHJ)solar cells are an important part of the current photovoltaic industry,and they have attracted wide spread attention because of their high open-circuit voltage(V_(oc)).The optical and electrical properties of transparent conductive oxide(TCO)films in SHJ solar cells affect the short-circuit current(J_(sc))and filling factor(FF),respectively,and the variation of J_(sc)and FF will further affect the conversion efficiency of the cells.Therefore,the performance of the TCO film layer limits the long-term development of SHJ solar cells.In recent years,the development of TCO films in SHJ cells has mainly focused on improving the performance of doped In 2O 3 systems and doped ZnO systems.In this paper,we firstly describe the different structures of SHJ solar cells,followed by the optoelectronic properties,namely,transmittance,band gap,sheet resistance,carrier concentration,mobility,and work function,of transparent conductive oxide films.The effect of contact properties with each layer on the performance of the cell is then summarized,the application and research status of various transparent conductive oxide films in SHJ solar cells are introduced,and the prospects for their future development trends are reviewed.

关 键 词：硅异质结太阳能电池 背发射极结构 透明导电氧化物薄膜 迁移率 

分 类 号：TB321[一般工业技术—材料科学与工程]