宽输入高抑制比带隙基准电路设计  

Design of Bandgap Reference Circuit with Wide Input and High Rejection Ratio

作　　者：孙宏建 张锦龙[1] 霍建龙 朱锦程 赵媛 赵浩生 阮昊 SUN Hongjian;ZHANG Jinlong;HUO Jianlong;ZHU Jincheng;ZHAO Yuan;ZHAO Haosheng;RUAN Hao(School of Physics and Electronics,Henan University,Kaifeng 475001,China;Shanghai Juji Technology Co.,Ltd.,Shanghai 200072,China)

机构地区：[1]河南大学物理与电子学院,开封475001 [2]上海聚迹科技有限公司,上海200072

出　　处：《微处理机》2023年第2期5-8,共4页Microprocessors

基　　金：科技部国家重点研发计划项目(2018YFB0704100);河南大学一流学科培育项目(2019YLZDCG02)。

摘　　要：为满足在高压宽输入电压条件下基准源的使用要求、提高电子产品的供电性能,基于华虹宏力0.18μm BCD工艺设计并实现一种宽输入高抑制比的带隙基准电路。在传统带隙基准电路基础上加以改进,利用电流源、稳压二极管与差分电路共同作用的结构来提高整体电路的稳定性和电源电压范围。利用Virtuoso工具Spectre进行仿真,实验结果表明所设计基准电压源能在较宽的电源电压范围内良好运行,实现了较为理想的精度和稳定性,适用于高压芯片的设计及电子设备中。In order to meet the requirements of reference source under the condition of high voltage and wide input voltage and improve the power supply performance of electronic products,a bandgap reference circuit with wide input and high rejection ratio is designed and implemented based on Hua Hong Hongli 0.18μm BCD process.On the basis of the traditional bandgap reference circuit,the structure of current source,Zener diode and difference channel is improved to improve the stability of the whole circuit and the power supply voltage range.Using Virtuoso tool Spectre to simulate,the experimental results show that the designed reference voltage source can run well in a wide range of power supply voltage,achieving ideal accuracy and stability,and is suitable for the design of high-voltage chips and electronic equipment.

关 键 词：带隙基准 电源抑制比 0.18μm工艺 

分 类 号：TN402[电子电信—微电子学与固体电子学]