半导体Bi_(2)Te_(0.5)Se_(2.5)热电薄膜的制备与表征  

Preparation and Characterization of Semiconductor Bi_(2)Te_(0.5)Se_(2.5)Thermoelectric Thin Film

作　　者：李晓龙 魏伟 郄照文 LI Xiao-long;WEI Wei;QIE Zhao-wen(College of Chemical Engineering and Modern Materials/Shaanxi Key Laboratory of Tailings Comprehensive Utilization of Resources,Shangluo University,Shangluo 726000,Shaanxi)

机构地区：[1]商洛学院化学工程与现代材料学院/陕西省尾矿资源综合利用重点实验室,陕西商洛726000

出　　处：《商洛学院学报》2023年第2期76-81,共6页Journal of Shangluo University

基　　金：陕西省大学生创新创业训练计划项目(S202111396035)。

摘　　要：为了制备高热电性能的薄膜材料,将掺杂策略和低维化策略相结合,运用电化学方法,在硝酸溶液中,采用恒电位沉积技术在ITO导电玻璃表面制备了Bi_(2)Te_(0.5)Se_(2.5)半导体热电薄膜材料。运用XRD对制备的薄膜物相进行检测,通过SEM对薄膜的表面形貌进行观察、用台阶仪测薄膜的膜厚、霍尔效应测试仪检测薄膜的热电性能参数。结果表明,所制备的薄膜是Bi_(2)Te_(0.5)Se_(2.5)材料,薄膜表面呈现“白菜叶”般的形貌,高倍扫描电镜照片可以看到,薄膜具有枝晶状的结构,这种结构对应于晶粒的长大速率大于成核速率。热电性能测试结果表明,制备的薄膜是N型半导体材料,功率因子是45.002μW/mK^(2)。In order to prepare thin films with high thermoelectric properties,semiconductor Bi_(2)Te_(0.5)Se_(2.5)thermoelectric thin film was successfully fabricated combining the strategy of doping with low dimension in HNO3 solution using constant potential technique.Meanwhile,the phase of the as-prepared thin film was determined by XRD.The morphology of the as-prepared film was characterized by SEM.In addition,the thickness of the film was measured by a surface profiler.Besides,the thermoelectric parameters were tested by Hall Effect Measurement Device in room temperature.The results showed that the as-fabricated thin film was pure Bi_(2)Te_(0.5)Se_(2.5).The thin film presented cabbage-leaf-shaped morphology by SEM.And the magnifying scanning electron microscopy picture displayed that there were branch-shaped structures in the thin film.A conclusion that the nucleation rate was slow than that of crystal growth could be drawn.The results of thermoelectric properties measurement demonstrated the as-prepared three-element thin film was n-type semiconductor materials.The power factor was 45.002μW/mK^(2).

关 键 词：热电材料 功率因子 形貌 电化学 成核速率 

分 类 号：O643[理学—物理化学]