Antimony fluoride(SbF_(3)):A potent hole suppressor for tin(II)-halide perovskite devices  

作　　者：Ao Liu Huihui Zhu Soonhyo Kim Youjin Reo Yong-Sung Kim Sai Bai Yong-Young Noh 

机构地区：[1]Department of Chemical Engineering,Pohang University of Science and Technology,Pohang,Republic of Korea [2]Korea Research Institute of Standards and Science,Daejeon,Republic of Korea [3]Department of Nano Science,University of Science and Technology,Daejeon,Republic of Korea [4]Institute of Fundamental and Frontier Sciences,University of Electronic Science and Technology of China,Chengdu,People's Republic of China

出　　处：《InfoMat》2023年第1期106-113,共8页信息材料（英文）

基　　金：This study was supported by the Ministry of Science and ICT through the National Research Foundation,funded by the Korean government(NRF-2021R1A2C3005401,2020M3F3A2A01085792,2020R1A4A1019455,2020M3D1A 1110548);Samsung Display Corporation.

摘　　要：Tin(Sn^(2+))-based halide perovskites have been developed as the most prom-ising alternatives to their toxic Pb-based counterparts in optoelectronic devices.However,the facile tin vacancy formation and easy oxidization characteristics make Sn^(2+)-based perovskites highly p-doped with excessive hole concentrations,which significantly hinder their applications.Herein,we demonstrate a potent hole inhibitor of antimony fluoride(SbF_(3)),which possesses a higher hole-suppression capability than conventional tin fluo-ride(SnF_(2)).A small amount of SbF_(3) allows a wide range of hole-density modulation with no or less SnF_(2) addition,thus mitigating the negative effects of using only SnF_(2).A SnF_(2)/SbF_(3) co-additive approach was further developed to achieve high-performance Sn 2+perovskite thin-film transis-tors operated in the enhancement mode with a five-fold enhancement of the field-effect mobility and improved operational stability compared to using only SnF_(2).We expect that the SbF 3 hole suppressor and co-additive approach can provide opportunities for the development of high-efficiency Sn^(2+)-perovskite optoelectronic devices.

关 键 词：electrical characterization hole suppressor thin-film transistor tin-based halide perovskite 

分 类 号：TB34[一般工业技术—材料科学与工程]