Conversion efficiency of strained wurtzite In_(x)Ga_(1-x)N/ZnSnN_(2)core/shell quantum dot solar cells under external electric field  

作　　者：ZHANG Jun SHI Lei YAN Zuwei 

机构地区：[1]College of Science,Inner Mongolia Agricultural University,Hohhot 010018,China

出　　处：《Optoelectronics Letters》2023年第3期144-150,共7页光电子快报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.12164033);the Natural Science Foundation of Inner Mongolia(Nos.2019MS01006 and 2020MS01008)。

摘　　要：In this study,the conversion efficiency(CE),open-circuit voltage(V_(OC))and short-circuit current density(J_(SC))of wurtzite In_(x)Ga_(1-x)N/ZnSnN_(2)core/shell quantum dot(QD)solar cells are studied by using the detailed balance model.The effects of strain and external electric field have been considered.The results show that with the increase of the core size,the V_(OC)increases,while the J_(SC)and CE decrease.With the increase of shell size or In content,the V_(OC)decreases,while the J_(SC)and CE increase.In addition,our calculations show that the band gap of QD increases due to strain,which leads to an increase of the V_(OC),but decreases of the CE and J_(SC).By contrast,the situation is opposite under the effect of external electric field.

关 键 词：QUANTUM STRAINED field 

分 类 号：TM914.4[电气工程—电力电子与电力传动]