Effect of growth interruption time on the quality of InAs/GaSb type-Ⅱ superlattice grown by molecular beam epitaxy  

作　　者：LIU Zhaojun ZHU Lianqing ZHENG Xiantong LU Lidan ZHANG Dongliang LIU Yuan 

机构地区：[1]School of Opto-Electronic Engineering,Changchun University of Science and Technology,Changchun 130022,China [2]Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument,Beijing Information Science&Technology University,Beijing 100192,China

出　　处：《Optoelectronics Letters》2023年第3期155-158,共4页光电子快报（英文版）

基　　金：supported by the Beijing Scholars Program (No.74A2111113);the Research Project of Beijing Education Committee (No.KM202111232019);the National Natural Science Foundation of China (No.62205029);the Young Elite Scientist Sponsorship Program by the China Association for Science and Technology (No.YESS20200146);the Beijing Natural Science Foundation (No.4202027)。

摘　　要：We systematically investigate the influence of growth interruption time on the properties of In As/Ga Sb type-II superlattices(T2SLs) epitaxial materials grown by molecular beam epitaxy(MBE). X-ray diffraction(XRD) and atomic force microscope(AFM) are used to characterize the material quality and morphology. The full width at half maximum(FWHM) of the XRD 0th satellite peaks ranges from 32″ to 41″, and the root mean square(RMS) roughness on a 5 μm×5 μm scan area is 0.2 nm. Photoluminescence(PL) test is used to reveal the influence of the growth interruption time on the optical property. Grazing incidence X-ray reflectivity(GIXRR) measurements are performed to analyze the roughness of the interface. The interface roughness(0.24 nm) is optimal when the interruption time is 0.5 s. The crystal quality of T2SLs can be optimized with appropriate interruption time by MBE, which is a guide for the material epitaxy of high performance T2SL infrared detector.

关 键 词：ROUGHNESS INTERRUPT BEAM 

分 类 号：TN304.054[电子电信—物理电子学]