A Ferroelectric Domain-Wall Transistor  

作　　者：欧阳俊 孙杰 李一鸣 江安全 Yang-Jun Ou;Jie Sun;Yi-Ming Li;An-Quan Jiang(State Key Laboratory of ASIC&System,School of Microelectronics,Fudan University,Shanghai 200433,China)

机构地区：[1]State Key Laboratory of ASIC&System,School of Microelectronics,Fudan University,Shanghai 200433,China

出　　处：《Chinese Physics Letters》2023年第3期82-86,共5页中国物理快报（英文版）

基　　金：the National Key Basic Research Program of China(Grant No.2019YFA0308500);the National Natural Science Foundation of China(Grant No.61904034)。

摘　　要：On the basis of novel properties of ferroelectric conducting domain walls,the domain wall nanoelectronics emerges and provides a brand-new dimension for the development of high-density,high-speed and energy-efficient nanodevices.For in-memory computing,three-terminal devices with both logic and memory functions such as transistors purely based on ferroelectric domain walls are urgently required.Here,a prototype ferroelectric domain-wall transistor with a well-designed coplanar electrode geometry is demonstrated on epitaxial Bi Fe O_(3)thin films.For the logic function,the current switching between on/off states of the transistor depends on the creation or elimination of conducting domain walls between drain and source electrodes.For the data storage,the transistor can maintain nonvolatile on/off states after the write/erase operations,providing an innovative approach for the development of the domain wall nanoelectronics.

关 键 词：DRAIN walls FERROELECTRIC 

分 类 号：TN386[电子电信—物理电子学]