A universal charge-compensating strategy for high-energy-density pseudocapacitors  

作　　者：Baoyi Yin Jiaqi Zhang Yuanhui Su Yu Huan Liang Hao Chen Wang Xun Hu Tao Wei 

机构地区：[1]School of Material Science and Engineering,University of Jinan,336 Nanxinzhuang West Road,Jinan 250022,Shandong,China [2]School of Microelectronics,Dalian University of Technology,Dalian 116024,Liaoning,China [3]Shanghai Key Laboratory of Multiphase Flow and Heat Transfer in Power Engineering,School of Energy and Power Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China [4]State Key Laboratory of ASIC and Systems,School of Microelectronics,Fudan University,Shanghai 200433,China

出　　处：《Journal of Energy Chemistry》2023年第3期333-339,I0010,共8页能源化学（英文版）

基　　金：supported by the National Natural Science Foundation of China(51972146,52072150)。

摘　　要：For pseudocapacitive electrode materials(PseEMs),despite much progress having been made in achieving both high power density and high energy density,a general strategy to guide the enhancement of intrinsic capacitive properties of PseEMs remains lacking.Here,we demonstrate a universal chargecompensating strategy to improve the charge-storage capability of PseEMs intrinsically:ⅰ) in the electrolyte with anion as charge carriers(such as OH-),reducing the multivalent cations of PseEMs into lower valences could create more reversible low-to-high valence redox cou ples to promote the intercalation of the anions;ⅱ) in the electrolytes with cation as charge carriers(such as H^(+),Li^(+),Na^(+)),oxidizing the multivalent cations of PseEMs into higher valences could introduce more reversible high-to-low valence redox couples to promote the intercalation of the cations.And we demonstrated that the improved intrinsic charge-storage capability for PseEMs originates from the increased Faradaic charge storage sites.

关 键 词：Supercapacitors Universal charge-compensating strategy Changed valence state Increased Faradaic charge storage sites 

分 类 号：TB383.1[一般工业技术—材料科学与工程] TM53[电气工程—电器]