1550 nm波段外腔窄线宽激光器增益芯片  

Gain Chip of 1550 nm Waveband External Cavity Narrow Linewidth Laser

作　　者：武艳青 车相辉[1] 王英顺[1] 李松松 刘牧荑 Wu Yanqing;Che Xianghui;Wang Yingshun;Li Songsong;Liu Muti(The 13th Research Institute,CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2023年第4期301-307,352,共8页Semiconductor Technology

摘　　要：针对外腔窄线宽激光器应用设计了一款半导体增益芯片,分析了斜率效率和增益谱特性,由于封装后增益峰红移会造成器件输出功率下降,指出设计中芯片的增益峰需偏离激光器激射波长。通过优化量子阱结构及材料应力,提高了芯片的斜率效率。为了降低芯片自身法布里-珀罗(FP)腔谐振效应,采用弯曲波导配合磁控溅射四层增透膜工艺,使芯片出光端面的有效反射率明显降低,提高了窄线宽激光器输出波长的稳定性。所设计芯片采用1%压应变量子阱材料,量子阱厚度为7.5 nm,量子阱数量为3个,芯片波导与解理面法线呈6°夹角。通过半导体流片工艺完成掩埋结芯片制作,并进行窄线宽激光器封装及测试,实现了1550 nm波段高效稳定的窄线宽激光输出。A semiconductor gain chip was designed for the application of external cavity narrow linewidth laser.The slope efficiency and gain spectrum characteristics were analyzed.Because the gain peak red shift after packaging would cause the decrease of the output power of the device,it was pointed out that the gain peak should deviate from the excitation wavelength of the laser.By optimizing the quantum well structure and material stress,the slope efficiency of the chip was improved.In order to reduce the resonant effect of Fabry-Perot(FP)cavity of the chip,a curved waveguide with magnetron sputtering four-layer anti-reflection film technology was used to reduce the effective reflectance of the light extraction end of the chip obviously,thus improving the stability of the output wavelength of the narrow linewidth laser.The 1%pressure-strain quantum well material was used to prepare the designed chip.The quantum well thickness is 7.5 nm,and the number of quantum wells is 3.The chip waveguide and cleavage surface normal are at an angle of 6°.The buried junction chip was prepared with the semiconductor flow sheet technology,then the narrow linewidth laser was packaged and tested,realizing the high efficiency and stability of 1550 nm narrow linewidth laser output.

关 键 词：半导体增益芯片 增益峰红移 斜率效率 增透膜 稳定输出 

分 类 号：TN365[电子电信—物理电子学]