Strain compensated type Ⅱ superlattices grown by molecular beam epitaxy  

作　　者：宁超 于天 孙瑞轩 刘舒曼 叶小玲 卓宁 王利军 刘俊岐 张锦川 翟慎强 刘峰奇 Chao Ning;Tian Yu;Rui-Xuan Sun;Shu-Man Liu;Xiao-Ling Ye;Ning Zhuo;Li-Jun Wang;Jun-Qi Liu;Jin-Chuan Zhang;Shen-Qiang Zhai;Feng-Qi Liu(Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;Beijing Academy of Quantum Information Sciences,Beijing 100193,China)

机构地区：[1]Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China [3]Beijing Academy of Quantum Information Sciences,Beijing 100193,China

出　　处：《Chinese Physics B》2023年第4期561-567,共7页中国物理B（英文版）

基　　金：Project supported by the National Key Research and Development Project of China (Grant No. 2018YFB2200500);the National Natural Science Foundation of China (Grant Nos. 61790583, 61835011, 62174158 and 61991431);Youth Innovation Promotion Association of the Chinese Academy of Sciences (Grant No. 2021107);the Key Program of the Chinese Academy of Sciences (Grant No. XDB43000000)。

摘　　要：We investigate a strain compensation method for the growth of complex interband cascade laser structures. For thick In As/Al Sb superlattice clad layers, the sublayer thicknesses were adjusted so that the tensile strain energy in the In As sublayer was equal to the compressive strain energy in the Al Sb sublayer. For the four-constituent active region, as the compressive strain in the Ga0.65In0.35Sb alloy layer was large, a tensile strain was incorporated in the chirped In As/Al Sb superlattice region for strain compensation to the Ga0.65In0.35Sb alloy. A laser structure of thickness 6 μm was grown on the Ga Sb substrate by molecular beam epitaxy. The wafer exhibited good surface morphology and high crystalline quality.

关 键 词：type-Ⅱsuperlattices strain compensation molecular beam epitaxy 

分 类 号：TB30[一般工业技术—材料科学与工程]