Exploration of growth conditions of TaAs Weyl semimetal thin film using pulsed laser deposition  

作　　者：李世恩 林泽丰 胡卫 闫大禹 陈赋聪 柏欣博 朱北沂 袁洁 石友国 金魁 翁红明 郭海中 Shien Li;Zefeng Lin;Wei Hu;Dayu Yan;Fucong Chen;Xinbo Bai;Beiyi Zhu;Jie Yuan;Youguo Shi;Kui Jin;Hongming Weng;Haizhong Guo(Key Laboratory of Materials Physics,Ministry of Education,School of Physics and Microelectronics,Zhengzhou University,Zhengzhou 450052,China;Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;School of Physical Sciences,University of Chinese Academy of Sciences,Beijing 100049,China;Songshan Lake Materials Laboratory,Dongguan 523808,China)

机构地区：[1]Key Laboratory of Materials Physics,Ministry of Education,School of Physics and Microelectronics,Zhengzhou University,Zhengzhou 450052,China [2]Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China [3]School of Physical Sciences,University of Chinese Academy of Sciences,Beijing 100049,China [4]Songshan Lake Materials Laboratory,Dongguan 523808,China

出　　处：《Chinese Physics B》2023年第4期582-586,共5页中国物理B（英文版）

基　　金：Project supported by the National Key Research and Development Program of China(Grant No.2021YFA0718700);the National Natural Science Foundation of China(Grant No.12174347);the Synergetic Extreme Condition User Facility(SECUF);the Center for Materials Genome。

摘　　要：Ta As,the first experimentally discovered Weyl semimetal material,has attracted a lot of attention due to its high carrier mobility,high anisotropy,nonmagnetic properties and strong interaction with light.These make it an ideal candidate for the study of Weyl fermions and applications in quantum computation,thermoelectric devices,and photodetection.For further basic physics studies and potential applications,large-size and high-quality Ta As films are urgently needed.However,it is difficult to grow As-stoichiometry Ta As films due to the volatilization of As during the growth.To solve this problem,we attempted to grow Ta As films on different substrates using targets with different As stoichiometric ratios via pulsed laser deposition(PLD).In this work,we found that partial As ions of the Ga As substrate are likely to diffuse into the Ta As films during growth,which was preliminarily confirmed by structural characterization,surface topography and composition analysis.As a result,the As content in the Ta As film was improved and the Ta As phase was achieved.Our work presents an effective method for the fabrication of Ta As films using PLD,enabling possible use of the Weyl semimetal film for functional devices.

关 键 词：Weyl semimetal Ta As film pulsed laser deposition 

分 类 号：O469[理学—凝聚态物理]