Secondary electron emission and photoemission from a negative electron affinity semiconductor with large mean escape depth of excited electrons  

作　　者：谢爱根 董红杰 刘亦凡 Ai-Gen Xie;Hong-Jie Dong;Yi-Fan Liu(School of Physics and Optoelectronic Engineering,Nanjing University of Information Science and Technology,Nanjing 210044,China;Jiangsu Key Laboratory for Optoelectronic Detection of Atmosphere and Ocean,Nanjing University of Information Science&Technology,Nanjing 210044,China;Jiangsu international Joint Laboratory on Meteorological Photonics and Optoelectronic Detection,Nanjing University of Information Science&Technology,Nanjing 210044,China)

机构地区：[1]School of Physics and Optoelectronic Engineering,Nanjing University of Information Science and Technology,Nanjing 210044,China [2]Jiangsu Key Laboratory for Optoelectronic Detection of Atmosphere and Ocean,Nanjing University of Information Science&Technology,Nanjing 210044,China [3]Jiangsu international Joint Laboratory on Meteorological Photonics and Optoelectronic Detection,Nanjing University of Information Science&Technology,Nanjing 210044,China

出　　处：《Chinese Physics B》2023年第4期677-690,共14页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.11873013)。

摘　　要：The formulae for parameters of a negative electron affinity semiconductor(NEAS)with large mean escape depth of secondary electrons A(NEASLD)are deduced.The methods for obtaining parameters such asλ,B,E_(pom)and the maximumδandδat 100.0 keV≥E_(po)≥1.0 keV of a NEASLD with the deduced formulae are presented(B is the probability that an internal secondary electron escapes into the vacuum upon reaching the emission surface of the emitter,δis the secondary electron yield,E_(po)is the incident energy of primary electrons and E_(pom)is the E_(po)corresponding to the maximumδ).The parameters obtained here are analyzed,and it can be concluded that several parameters of NEASLDs obtained by the methods presented here agree with those obtained by other authors.The relation between the secondary electron emission and photoemission from a NEAS with large mean escape depth of excited electrons is investigated,and it is concluded that the presented method of obtaining A is more accurate than that of obtaining the corresponding parameter for a NEAS with largeλ_(ph)(λ_(ph)being the mean escape depth of photoelectrons),and that the presented method of calculating B at E_(po)>10.0 keV is more widely applicable for obtaining the corresponding parameters for a NEAS with largeλ_(ph).

关 键 词：negative electron affinity semiconductor secondary electron emission PHOTOEMISSION the probability secondary electron yield large mean escape depth of excited electrons 

分 类 号：O462.2[理学—电子物理学]