Dynamic electrostatic-discharge path investigation relied on different impact energies in metal-oxide-semiconductor circuits  

作　　者：谢田田 王俊 杜飞波 郁扬 蔡燕飞 冯二媛 侯飞 刘志伟 Tian-Tian Xie;Jun Wang;Fei-Bo Du;Yang Yu;Yan-Fei Cai;Er-Yuan Feng;Fei Hou;Zhi-Wei Liu(State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China;Design Service,Semiconductor Manufacturing International Corporation,Shanghai 200120,China)

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China [2]Design Service,Semiconductor Manufacturing International Corporation,Shanghai 200120,China

出　　处：《Chinese Physics B》2023年第4期701-706,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.61974017)。

摘　　要：Gate-grounded n-channel metal-oxide-semiconductor(GGNMOS)devices have been widely implemented as power clamps to protect semiconductor devices from electrostatic discharge stress owing to their simple construction,easy triggering,and low power dissipation.We present a novel I-V characterization of the GGNMOS used as the power clamp in complementary metal-oxide-semiconductor circuits as a result of switching the ESD paths under different impact energies.This special effect could cause an unexpected latch-up or pre-failure phenomenon in some applications with relatively large capacitances from power supply to power ground,and thus should be urgently analyzed and resolved.Transmission-linepulse,human-body-modal,and light-emission tests were performed to explore the root cause.

关 键 词：electrostatic discharge trigger voltage latch up d V/dt effect 

分 类 号：TN386.1[电子电信—物理电子学]