基于InP DHBT工艺的33~170 GHz共源共栅放大器  

A 33~170 GHz cascode amplifier based on InP DHBT technology

作　　者：王伯武 于伟华 侯彦飞[3] 余芹 孙岩 程伟[4] 周明[4] WANG Bo-Wu;YU Wei-Hua;HOU Yan-Fei;YU Qin;SUN Yan;CHENG Wei;ZHOU Ming(Beijing Key Laboratory of Millimeter Wave and Terahertz Technology,Beijing Institute of Technology,Beijing 100081,China;BIT Chongqing Institute of Microelectronics and Microsystems,Chongqing 400031,China;Beijing Institute of Radio Measurement,Beijing 100039,China;Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Devices Institute,Nanjing 210016,China)

机构地区：[1]北京理工大学毫米波与太赫兹技术北京市重点实验室,北京100081 [2]北京理工大学重庆微电子研究院,重庆400031 [3]北京无线电测量研究所,北京100039 [4]南京电子器件研究所单片集成电路与模块实验室,江苏南京210016

出　　处：《红外与毫米波学报》2023年第2期197-200,共4页Journal of Infrared and Millimeter Waves

基　　金：Supported by National Natural Science Foundation of China(61771057)。

摘　　要：基于500 nm磷化铟双异质结双极晶体管(InP DHBT)工艺,设计了一种工作在33~170 GHz频段的超宽带共源共栅功率放大器。输入端和输出端的平行短截线起到变换阻抗和拓展带宽的作用,输出端紧密相邻的耦合传输线补偿了一部分高频传输损耗。测试结果表明,该放大器的最大增益在115 GHz达到11.98 dB,相对带宽为134.98%,增益平坦度为±2 dB,工作频段内增益均好于10 dB,输出功率均好于1 dBm。In this paper,a wide band cascode power amplifier working at 33~170 GHz is designed,based on the 500 nm InP dual-heterojunction bipolar transistor(DHBT)process.Two pairs of parallel input and output stub lines can effectively expand the working bandwidth.The output coupling line compensates the high frequency transmission.The measured results show that the maximum gain of the amplifier is 11.98 dB at 115 GHz,the rel⁃ative bandwidth is 134.98%,the gain flatness is±2 dB,the gain is better than 10 dB and the output power is bet⁃ter than 1 dBm in the operating bandwidth.

关 键 词：磷化铟双异质结双极晶体管(InP DHBT) 单片微波集成电路(MMIC) 共源共栅放大器 宽带 

分 类 号：TN722[电子电信—电路与系统]