基于GaAs IPD的小型化高选择性X波段宽带带通滤波器  

Compact High-selectivity X-band Wideband Bandpass Filter on GaAs-IPD Technology

作　　者：赵辉[1] 刘海文 冯林平[1] 高一强 孙晓玮[3] ZHAO Hui;LIU Hai-wen;FENG Lin-ping;GAO Yi-qiang;SUN Xiao-wei(Xi'an Jiaotong University,Xi'an 712000,China;Hangzhou Dianzi University,Hangzhou 310018,China;Shanghai Institute of Microsystem and Information Technology,Shanghai 200050,China)

机构地区：[1]西安交通大学,西安712000 [2]杭州电子科技大学,杭州310018 [3]中国科学院上海微系统与信息技术研究所,上海200050

出　　处：《微波学报》2023年第2期28-32,38,共6页Journal of Microwaves

基　　金：国家重点研发计划(2017YFE0128200);国家自然科学基金(U1831201,62171363);陕西省重点研发计划国际科技合作计划重点项目(2022KWZ-15);陕西省重点研发计划一般项目(2022GY-095);陕西省深空探测智能信息技术重点实验室计划(2021SYS-04)。

摘　　要：文中设计并实际开发了一种基于砷化镓(Gallium Arsenide,GaAs)集成无源器件(Integrated Passive Device,IPD)技术的小型化高选择性宽带带通滤波器。首先,所提出的带通滤波器是通过引入集总参数谐振器来设计的,以实现高选择性和宽带性能。其次,进一步研究了实现高选择性和宽带性能的工作原理。最后,为了证明所述性能,基于GaAs-IPD技术设计、制造和测量了一个紧凑型高选择性宽带带通滤波器。该滤波器工作频率覆盖了整个X波段(6~13 GHz),相对带宽为74.0%,带外实现了四个传输零点,从而实现了高选择性和良好的带外性能,芯片尺寸为0.05λ_(0)×0.03λ_(0)。比较了实测结果与电磁仿真结果,验证了该设计的可行性。This article depicts the design and practical development of a compact,high-selectivity and wideband bandpass filter(BPF)using GaAs-based integrated passive device(IPD)technology.First,the proposed BPF is designed by introducing lumped parameter resonators to achieve the performance of high-selectivity and wideband.Second,the working principles of the high-selectivity and wideband performance are further investigated.Finally,for demonstration,a compact high-selectivity wideband bandpass filter is designed,fabricated and measured using GaAs-IPD technology.This BPF works at the whole X-Band frequencies(from 6 GHz to 13 GHz)and the relative bandwidth is 74.0%.Four transmission-zeros are realized,resulting in high-selectivity and good out-of-band performance.The chip size is 0.05λ_(0)×0.03λ_(0).The simulated and measured results are compared to confirm the feasibility of the proposed design.

关 键 词：带通滤波器 砷化镓 集成无源器件 小型化 高选择性 宽带 

分 类 号：TN713.5[电子电信—电路与系统]