CdIn_(2)S_(4)光电薄膜材料的制备及光电性能研究  

Study on the preparation and photoelectric properties of CdIn_(2)S_(4)thin film materials

作　　者：李格格 杜文静 贾会敏[2] 郑直[2] Li Gege;Du Wenjing;Jia Huimin;Zheng Zhi(School of Civil Engineering and Communication,North China University of Water Resources and Electric Power,Zhengzhou 450045;College of Chemical and Materials Engineering,Xuchang University,Xuchang 461000)

机构地区：[1]华北水利水电大学土木与交通学院,郑州450045 [2]许昌学院化工与材料学院,许昌461000

出　　处：《化工新型材料》2023年第3期110-114,126,共6页New Chemical Materials

基　　金：国家自然科学基金面上项目(62274141)。

摘　　要：以氯化镉(CdCl_(2)·2.5H_(2)O)、氯化铟(InCl_(3)·4H_(2)O)和硫代乙酰胺(TAA)为原料,利用水热法在FTO导电基底上制备CdIn_(2)S_(4)薄膜材料。利用X射线粉末衍射仪(XRD)、扫描电子显微镜(SEM)、高分辨透射电子显微镜(HRTEM)、紫外-可见漫反射光谱(UV-Vis)等手段对所得薄膜的物相结构、表面形貌、成分及光吸收性能等进行表征。借助瞬态表面光电压(TSPV)技术探究CdIn_(2)S_(4)薄膜的光生载流子的分离、传输及复合过程。结果表明:制备的CdIn_(2)S_(4)薄膜结晶良好、表面均匀平整且具有良好的光吸收性能和光电响应。构建了以CdIn_(2)S_(4)和P3HT为吸收层、TiO_(2)为电子传输层的异质结薄膜太阳能电池器件(FTO/TiO_(2)/CdIn_(2)S_(4)/P3HT/Au)。目前其光电转化效率最高为0.022%,光电性能有待进一步提高。CdIn_(2)S_(4)thin film material was prepared by hydrothermal method on FTO conductive substrate using cadmium chloride(CdCl_(2)·2.5H_(2)O),indium chloride(InCl_(3)·4H_(2)O)and thioacetamide(TAA)as raw materials.The phase structure,surface morphology,composition and optical absorption properties of the obtained films were characterized by X-ray powder diffraction(XRD),scanning electron microscopy(SEM),high-resolution transmission electron microscopy(HRTEM)and UV-Vis diffuse reflectance spectroscopy(UV-Vis).Transient surface photovoltage(TSPV)technology was used to investigate the separation,transport and recombination of photogenerated carriers in CdIn_(2)S_(4)films.The results showed that the CdIn_(2)S_(4)films had good crystallization,uniform surface,good optical absorption performance and photoelectric response.A heterojunction thin-film solar cell device(FTO/TiO_(2)/CdIn_(2)S_(4)/P3HT/Au)with CdIn_(2)S_(4)and P3HT as the absorption layer and TiO_(2)as the electron transport layer was constructed.The highest photoelectric conversion efficiency was 0.022%,and the photoelectric performance needed to be further improved.

关 键 词：CdIn2S4 水热法 异质结 薄膜太阳能电池 

分 类 号：O644.1[理学—物理化学] TQ050.4[理学—化学]