基于二维光子晶体的电磁双参量传感的研究  

Study of Electromagnetic Dual Parameter Sensor Based on Two-Dimensional Photonic Crystal

作　　者：施伟华[1] 上官铭宇 陈伟[1] Shi Weihua;Shangguan Mingyu;Chen Wei(College of Electronic and Optical Engineering,College of Flexible Electronics(Future Technology),Nanjing University of Posts and Telecommunications,Nanjing 210023,Jiangsu,China)

机构地区：[1]南京邮电大学电子与光学工程学院、柔性电子(未来技术)学院,江苏南京210023

出　　处：《激光与光电子学进展》2023年第5期316-322,共7页Laser & Optoelectronics Progress

基　　金：国家自然科学基金(61571237,61275067)。

摘　　要：提出一种基于二维光子晶体的镜像边腔耦合型电压和磁场强度双参量传感结构。在完整的光子晶体中通过空气孔的平移和尺寸改变引入缺陷,分别形成H0腔和改进的H1腔这两种光子晶体微腔;将H0腔和改进的H1腔分别与W1波导进行边腔耦合,并沿W1波导做镜像对称结构;在微腔中分别填充液晶和磁流体作为敏感材料,利用液晶的电光效应和磁流体的磁光效应形成电压和磁场强度的传感区域。由于光子晶体的光子局域特性,上述镜像边腔耦合结构的透射谱中形成两个相对独立的透射峰,通过测量两个透射峰的波长偏移量间接测量电压和磁场强度的变化。利用时域有限差分法,在各向异性的完美匹配层边界条件下对传感特性进行数值研究。结果表明:在电压范围分别为14~32 V和32~50 V时,电压灵敏度分别为0.65 nm/V和1.86 nm/V;折射率灵敏度和品质因子在14~50 V的电压范围分别为296 nm/RIU和3350,在10~40 mT的磁场强度范围分别为251 nm/RIU和2722,且磁场强度灵敏度为13.06 nm/mT。A symmetric side cavity coupling sensing structure based on twodimensional photonic crystals is proposed for voltage and magnetic field strength sensing.In the complete photonic crystal,defects are introduced through the translation and size change of air holes,and two photonic crystal microcavities,H0 cavity and improved H1 cavity,are formed respectively;The H0 cavity and the improved H1 cavity are coupled with the W1 waveguide respectively,and the symmetrical structure is made along the W1 waveguide;The microcavity is filled with liquid crystal and magnetic fluid as sensitive materials,and the electrooptical effect of liquid crystal and the magnetooptical effect of magnetic fluid are used to form the sensing region of voltage and magnetic field intensity.Due to the photon localization characteristics of photonic crystals,two relatively independent transmission peaks are formed in the transmission spectrum of the side cavity coupling structure.The changes of voltage and magnetic field intensity are indirectly measured by measuring the wavelength offset of the two transmission peaks.The sensing characteristics are numerically studied under anisotropic perfectly matched layer boundary conditions using the finitedifference timedomain method.The simulation results reveal that the voltage sensitivity can reach 0.65 nm/V in the voltage range of 14‒32 V and 1.86 nm/V in the voltage range of 32‒50 V.In addition,the sensor demonstrates a refractive index sensitivity and quality factor of 296 nm/RIU and 3350 in the voltage range of 14‒50 V and 251 nm/RIU and 2722 in the magnetic field strength range of 10‒40 mT,respectively.And the magnetic field strength sensitivity is 13.06 nm/mT in the magnetic field strength range of 10‒40 mT.

关 键 词：遥感与传感器 二维光子晶体 电磁传感 镜像式微腔 灵敏度 

分 类 号：O436[机械工程—光学工程]