1英寸CsPbCl_(3)晶体的生长及其发光性能研究  

Growth and Luminescence Properties of 1 Inch CsPbCl_(3) Crystals

作　　者：王卿 武书凡 陆枳岑 钱露 潘尚可[1,2] 潘建国 WANG Qing;WU Shufan;LU Zhichen;QIAN Lu;PAN Shangke;PAN Jianguo(School of Material Sciences and Chemical Engineering,Ningbo University,Ningbo 315211,China;Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province,Ningbo 315211,China)

机构地区：[1]宁波大学材料科学与化学工程学院,宁波315211 [2]浙江省光电探测及器件重点实验室,宁波315211

出　　处：《人工晶体学报》2023年第4期578-583,612,共7页Journal of Synthetic Crystals

基　　金：国家自然科学基金(61875096)。

摘　　要：CsPbX_(3)(X=Cl^(-), Br^(-), I^(-))钙钛矿单晶具有优异的光电性能,有望成为下一代光电探测材料。由于CsCl在前驱体中的溶解度过小,通过低温溶液法较难生长得到CsPbCl_(3)晶体。本工作采用坩埚下降法成功生长了1英寸完整的CsPbCl_(3)晶体,并对晶体进行了一系列加工,得到了ϕ10 mm×10 mm和厚度为2 mm的单晶片。测试了晶体的X射线粉末衍射图谱、TG/DTA曲线、X射线激发发射光谱、透过光谱和低温荧光光谱。在X射线的激发下,在430和575 nm观察到两个X射线激发发射峰,晶体的透过率达到75%;光致发光(PL)强度与温度依赖性曲线中可以观察到热猝灭现象,计算得到晶体4个峰的激子结合能分别为12.59、8.21、12.41和21.59 meV。CsPbX_(3)(X=Cl^(-),Br^(-),I^(-))pervoskite single crystals have excellent photoelectric properties,and are promising to become the next generation of photoelectric detection materials.It is difficult to grow CsPbCl_(3) crystals by low-temperature solution method due to the solubility of CsCl in the precursor is too small.Here,1 inch complete CsPbCl_(3) crystals were grown by Bridgman method,a series of processing was performed on the crystals to obtain single crystal sheets ofϕ10 mm×10 mm and 2 mm thickness.X-ray powder diffraction patterns,TG/DTA curves,X-ray excitation emission spectra,transmission spectra and low temperature fluorescence spectra of the crystals were measured.Under X-ray excitation,two X-ray excitation peaks are observed at 430 and 575 nm,and the transmittance of the crystal reaches 75%;thermal quenching could be observed by the photoluminescence(PL)intensity versus temperature dependence curve,and the exciton binding energies of the four peaks of the crystal are calculated to be 12.59,8.21,12.41 and 21.59 meV,respectively.

关 键 词：钙钛矿单晶 CsPbCl_(3)晶体 坩埚下降法 光学带隙 低温荧光光谱 激子结合能 

分 类 号：O78[理学—晶体学] O734