基于氯化铯背接触处理优化硒化锑薄膜太阳电池性能  

Optimization of Antimony Selenide Thin Film Solar Cells Performance Based on Cesium Chloride Back Contact Treatment

作　　者：赵聪 郭华飞 邱建华[2] 丁建宁 袁宁一 ZHAO Cong;GUO Huafei;QIU Jianhua;DING Jianning;YUAN Ningyi(School of Materials Science and Engineering,Changzhou University,Changzhou 213000,China;School of Microelectronics and Control Engineering,Changzhou University,Changzhou 213000,China;Yangzhou University,Yangzhou 225000,China)

机构地区：[1]常州大学材料科学与工程学院,常州213000 [2]常州大学微电子与控制工程学院,常州213000 [3]扬州大学,扬州225000

出　　处：《人工晶体学报》2023年第4期636-644,共9页Journal of Synthetic Crystals

基　　金：江苏省自然科学基金(BK20220624);常州市自然科学应用基金(CJ20210127)。

摘　　要：本文使用气相输运沉积的方式制备了硒化锑(Sb_(2)Se_(3))薄膜太阳电池,并采用氯化铯(CsCl)溶液对器件上界面进行处理,同时对薄膜和器件进行了一系列表征。研究发现,CsCl溶液的背接触处理不仅可以提高器件的载流子收集以及降低上界面复合,还可以优化薄膜的结晶性、表面粗糙度和光电性能。基于FTO/CdS/Sb_(2)Se_(3)/CsCl/Au的器件结构,得到了转换效率为6.32%的高效Sb_(2)Se_(3)薄膜太阳电池,比基础器件效率提升了12%。本文的工作对Sb_(2)Se_(3)薄膜太阳电池未来的研究有一定的指导作用,其他同类型半导体光伏器件也可借鉴。Antimony selenide(Sb_(2)Se_(3))thin film solar cells were prepared by vapor transport deposition,and cesium chloride(CsCl)solution was used to treat the upper interface of the device.Meanwhile,a series of characterizations of the thin film and the device were also performed.The study shows that the back contact treatment of CsCl solution can not only improve the carrier collection and reduce upper interface recombination of the device,but also optimize the crystallinity,surface roughness and optoelectronic performance of thin film.Based on the device structure of FTO/CdS/Sb_(2)Se_(3)/CsCl/Au,a high-efficiency Sb_(2)Se_(3) thin film solar cell with efficiency of 6.32%are obtained,which is 12%higher than that of the basic device.The research may provide some guidance to further development of Sb_(2)Se_(3) thin film solar cells and other similar types of semiconductor photovoltaic devices.

关 键 词：硒化锑 氯化铯 背接触处理 薄膜太阳电池 气相输运沉积技术 薄膜光电性能 

分 类 号：TM914.4[电气工程—电力电子与电力传动]