High-uniformity 2×64 silicon avalanche photodiode arrays with silicon multiple epitaxy technology  

作　　者：王天财 曹澎 彭红玲 徐传旺 宋海智 郑婉华 Tiancai Wang;Peng Cao;Hongling Peng;Chuanwang Xu;Haizhi Song;Wanhua Zheng(Laboratory of Solid-State Optoelectronics Information Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Electronic and Communication Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Southwest Institute of Technology Physics,Chengdu 610041,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;Weifang Academy of Advanced Opto-electronic Circuits,Weifang 261021,China)

机构地区：[1]Laboratory of Solid-State Optoelectronics Information Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]College of Electronic and Communication Engineering,University of Chinese Academy of Sciences,Beijing 100049,China [3]State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [4]Southwest Institute of Technology Physics,Chengdu 610041,China [5]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China [6]Weifang Academy of Advanced Opto-electronic Circuits,Weifang 261021,China

出　　处：《Chinese Optics Letters》2023年第3期118-122,共5页中国光学快报（英文版）

基　　金：supported by the National Science and Technology Major Project(No.2018YFE0200900)。

摘　　要：In this paper,high-uniformity 2×64 silicon avalanche photodiode[APD]arrays are reported.Silicon multiple epitaxy technology was used,and the high performance APD arrays based on double-layer epiwafers are achieved for the first time,to the best of our knowledge.A high-uniformity breakdown voltage with a fluctuation of smaller than 3.5 V is obtained for the fabricated APD arrays.The dark currents are below 90 pA for all 128 pixels at unity gain voltage.The pixels in the APD arrays show a gain factor of larger than 300 and a peak responsivity of 0.53 A/W@M=1 at 850 nm[corresponding to maximum external quantum efficiency of 81%]at room temperature.Quick optical pulse response time was measured,and a corresponding cutoff frequency up to 100 MHz was obtained.

关 键 词：avalanche photodiode arrays SILICON multiple epitaxy technology dark current 

分 类 号：TN312.7[电子电信—物理电子学]