Damage resistance of B4C reflective mirror irradiated by X-ray free-electron laser  

作　　者：曹锦玉 李淑慧 佟亚军 汤鸣 李文斌 黄秋实 江怀东 王占山 Jinyu Cao;Shuhui Li;Yajun Tong;Ming Tang;Wenbin Li;Qiushi Huang;Huaidong Jiang;Zhanshan Wang(MOE Key Laboratory of Advanced Micro-Structured Materials,Shanghai 200092,China;Institute of Precision Optical Engineering,School of Physics Science and Engineering,Tongji University,Shanghai 200092,China;Center for Transformative Science,ShanghaiTech University,Shanghai 201210,China)

机构地区：[1]MOE Key Laboratory of Advanced Micro-Structured Materials [2]Institute of Precision Optical Engineering,School of Physics Science and Engineering,Tongji University [3]Center for Transformative Science,ShanghaiTech University

出　　处：《Chinese Optics Letters》2023年第2期105-110,共6页中国光学快报（英文版）

基　　金：supported by the National Natural Science Foundation of China(NSFC)(No.11875203)。

摘　　要：In this paper,a simple theoretical model combining Monte Carlo simulation with the enthalpy method is provided to simulate the damage resistance of B4C/Si-sub mirror under X-ray free-electron laser irradiation.Two different damage mechanisms are found,dependent on the photon energy.The optimum B4C film thickness is determined by studying the dependence of the damage resistance on the film thickness.Based on the optimized film thickness,the damage thresholds are simulated at photon energy of 0.4-25 keV and a grazing incidence angle of 2 mrad.It is recommended that the energy range around the Si K-edge should be avoided for safety reasons.

关 键 词：B4C film XFEL damage mechanism damage threshold enthalpy method 

分 类 号：TH74[机械工程—光学工程] TN249[机械工程—仪器科学与技术]