An on-Si directional second harmonic generation amplifier for MoS2/WS2 heterostructure  被引量:1

在线阅读下载全文

作  者:Jiaxing Du Jianwei Shi Chun Li Qiuyu Shang Xinfeng Liu Yuan Huang Qing Zhang 

机构地区:[1]School of Materials Science and Engineering,Peking University,Beijing 100871,China [2]CAS Key Laboratory of Standardization and Measurement for Nanotechnology,CAS Center for Excellence in Nanoscience,National Center for Nanoscience and Technology,Beijing 100190,China [3]Advanced Research Institute of Multidisciplinary Science,Beijing Institute of Technology,Beijing 100081,China

出  处:《Nano Research》2023年第3期4061-4066,共6页纳米研究(英文版)

基  金:the National Natural Science Foundation of China(Nos.51991340,51991344,52072006,62022089,and 11874405);the Natural Science Foundation of Beijing Municipality(No.JQ21004);the National Key Research and Development Program of China(No.2019YFA0308000);Chongqing Outstanding Youth Fund(No.2021ZX0400005);the Strategic Priority Research Program(B)of the Chinese Academy of Sciences(No.XDB33000000).

摘  要:Transition metal dichalcogenides(TMD)heterostructure is widely applied for second harmonic generation(SHG)and holds great promises for laser source,nonlinear switch,and optical logic gate.However,for atomically thin TMD heterostructures,low SHG conversion efficiency would occur due to reduction of light-matter interaction length and lack of phase matching.Herein,we demonstrated a facile directional SHG amplifier formed by MoS2/WS2 monolayer heterostructures suspended on a holey SiO_(2)/Si substrate.The SHG enhancement factor reaches more than two orders of magnitude in a wide spectral range from 355 to 470 nm,and the radiation angle is reduced from 38°to 19°indicating higher coherence and better emission directionality.The giant SHG enhancement and directional emission are attributed to the great excitation and emission field concentration induced by a self-formed vertical Fabry-Pérot microcavity.Our discovery gives helpful insights for the development of two-dimensional(2D)nonlinear optical devices.

关 键 词:two-dimensional(2D)materials transition metal dichalcogenides HETEROSTRUCTURE second harmonic generation field enhancement optical microcavity 

分 类 号:TN722[电子电信—电路与系统]

 

参考文献:

正在载入数据...

 

二级参考文献:

正在载入数据...

 

耦合文献:

正在载入数据...

 

引证文献:

正在载入数据...

 

二级引证文献:

正在载入数据...

 

同被引文献:

正在载入数据...

 

相关期刊文献:

正在载入数据...

相关的主题
相关的作者对象
相关的机构对象