Laser trimming for lithography-free fabrications of MoS_(2)devices  

作　　者：Yong Xie OnurÇakıroğlu Wenshuai Hu Kexin He Sergio Puebla Thomas Pucher Qinghua Zhao Xiaohua Ma Carmen Munuera Andres Castellanos-Gomez 

机构地区：[1]Key Laboratory of Wide Band-Gap Semiconductor Technology,School of Advanced Materials and Nanotechnology,Xidian University,Xi’an 710071,China [2]Materials Science Factory,Instituto de Ciencia de Materiales de Madrid,Consejo Superior de Investigaciones Científicas,28049 Madrid,Spain

出　　处：《Nano Research》2023年第4期5042-5046,共5页纳米研究（英文版）

基　　金：Financial supports from the National Natural Science Foundation of China(NSFC)(Nos.62011530438 and 61704129);supported by the Key Research and Development Program of Shaanxi(No.2021KW-02),the fundamental Research Funds for the Central Universities(No.JB211409 and 20109215605);the fund of the State Key Laboratory of Solidification Processing in Northwestern Polytechnical University(No.SKLSP201612);funding by European Research Council(ERC)through the project 2D-TOPSENSE(GA 755655);European Union's Horizon 2020 research and innovation program(Graphene Core2-Graphene-based disruptive technologies(No.881603);Graphene Core3-Graphene-based disruptive technologies(No.956813));EU FLAG-ERA through the project To2Dox(No.JTC-2019-009);the Comunidad de Madrid through the project CAIRO-CM project(No.Y2020/NMT-6661);the Spanish Ministry of Science and Innovation through the project(No.PID2020-118078RB-I00).O.Ç.acknowledges the European Union's Horizon 2020 research and innovation program under the grant agreement 956813(2Exciting).S.P.acknowledges the fellowship PRE2018-084818.

摘　　要：Single-layer MoS_(2)produced by mechanical exfoliation is usually connected to thicker and multilayer regions.We show a facile laser trimming method to insulate single-layer MoS_(2)regions from thicker ones.We demonstrate,through electrical characterization,that the laser trimming method can be used to pattern single-layer MoS_(2)channels with regular geometry and electrically disconnected from the thicker areas.Scanning photocurrent microscope further confirms that in the as-deposited flake(connected to a multilayer area)most of the photocurrent is being generated in the thicker flake region.After laser trimming,scanning photocurrent microscopy shows how only the single-layer MoS_(2)region contributes to the photocurrent generation.The presented method is a direct-write and lithography-free(no need of resist or wet chemicals)alternative to reactive ion etching process to pattern the flakes that can be easily adopted by many research groups fabricating devices with MoS_(2) and similar twodimensional materials.

关 键 词：2D materials transition metal dichalcogenides laser trimming differential reflectance 

分 类 号：TN24[电子电信—物理电子学]