Polarization-induced photocurrent switching effect in heterojunction photodiodes  

作　　者：Dingbo Chen Yu-Chang Chen Guang Zeng Yu-Chun Li Xiao-Xi Li Dong Li Chao Shen Nan Chi Boon S.Ooi David Wei Zhang Hong-Liang Lu 

机构地区：[1]State Key Laboratory of ASIC and System,Shanghai Institute of Intelligent Electronics&Systems,School of Microelectronics,Fudan University,Shanghai 200433,China [2]Key Laboratory for Information Science of Electromagnetic Waves,Department of Communication Science and Engineering,Fudan University,Shanghai 200433,China [3]Photonics Laboratory,Division of Computer,Electrical,and Mathematical Sciences and Engineering,King Abdullah University of Science and Technology(KAUST),Thuwal 23955-6900,Kingdom of Saudi Arabia

出　　处：《Nano Research》2023年第4期5503-5510,共8页纳米研究（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.62027818,51861135105,61874034,and 11974320);the National Key Research and Development Program of China(No.2021YFB3202500);International Science and Technology Cooperation Program of Shanghai Science and Technology Innovation Action Plan(No.21520713300).

摘　　要：The unipolar photocurrent in conventional photodiodes(PDs)based on photovoltaic effect limits the output modes and potential versatility of these devices in photodetection.Bipolar photodiodes with photocurrent switching are emerging as a promising solution for obtaining photoelectric devices with unique and attractive functions,such as optical logic operation.Here,we design an all-solid-state chip-scale ultraviolet(UV)PD based on a hybrid GaN heterojunction with engineered bipolar polarized electric field.By introducing the polarization-induced photocurrent switching effect,the photocurrent direction can be switched in response to the wavelength of incident light at 0 V bias.In particular,the photocurrent direction exhibits negative when the irradiation wavelength is less than 315 nm,but positive when the wavelength is longer than 315 nm.The device shows a responsivity of up to−6.7 mA/W at 300 nm and 5.3 mA/W at 340 nm,respectively.In particular,three special logic gates in response to different dual UV light inputs are demonstrated via a single bipolar PD,which may be beneficial for future multifunctional UV photonic integrated devices and systems.

关 键 词：GaN heterostructure ultraviolet(UV)photodiodes bipolar photocurrent optical logic device 

分 类 号：TN312[电子电信—物理电子学]