Heterointerface engineering of perovskite defects and energetics for light-emitting diodes  

作　　者：Xiaomeng Zhang Lei Shi Junyang Bai Feijiu Wang Maowei Jiang 

机构地区：[1]Key Laboratory of Special Functional Materials of Ministry of Education of China,School of Materials Science,Henan University,Kaifeng 475004,China [2]Henan Key Laboratory of Photovoltaic Materials,Henan University,Kaifeng 475004,China

出　　处：《Nano Research》2023年第4期5525-5532,共8页纳米研究（英文版）

基　　金：financial support from the National Natural Science Foundation of China(No.22105061);Henan University start-up funding.

摘　　要：Perovskite light-emitting diodes(PeLEDs)rely on optimized device architecture to realize effective electro-optical converting.Especially,the stacks of dissimilar semiconducting materials form heterointerfaces,at which the defects and energetics of perovskite film greatly affect the device performance.Herein,we focus on the heterointerface engineering of perovskite towards high-quality PeLEDs.The defect engineering at both the bottom-surface(namely buried interface)and top-surface of perovskite film is simultaneously performed by semiconducting passivating molecules,which feature aligned energy levels and superior carrier injection ability regarding to perovskite.Moreover,such defect passivation could influence the heterointerface energetics.The perovskite work function is decreased by our suggested passivator treatment because of interface dipole,which results in band bending at the heterojunction and modulates the carrier dynamics.Hence,the electron injection is greatly enhanced,which boosts the up-conversion electroluminescence in current system.Overall,via the heterointerface engineering of defects and energetics synergistically,efficient PeLEDs with 3-fold enhancement of external quantum efficiency and low driving voltages with respect to pristine ones are achieved based on our proposed PeLED architecture.

关 键 词：HETEROINTERFACE defect passivation ENERGETICS perovskite light-emitting diodes up-conversion electroluminescence 

分 类 号：TN312.8[电子电信—物理电子学]