Borophene-ZnO heterostructures:Preparation and application as broadband photonic nonvolatile memory  

作　　者：Runsheng Liu Chuang Hou Xinchao Liang Zitong Wu Guoan Tai 

机构地区：[1]The State Key Laboratory of Mechanics and Control of Mechanical Structures and Laboratory of Intelligent Nano Materials and Devices of Ministry of Education,College of Aerospace Engineering,Nanjing University of Aeronautics and Astronautics,Nanjing 210016,China

出　　处：《Nano Research》2023年第4期5826-5833,共8页纳米研究（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.61774085),Natural Science Foundation of Jiangsu Province(No.BK20201300);the Research Fund of State Key Laboratory of Mechanics and Control of Mechanical Structures(NUAA)(No.MCMS-I-0420G02);the Fundamental Research Funds for the Central Universities(No.NP2022401);the Fund of Prospective Layout of Scientific Research for NUAA(Nanjing University of Aeronautics and Astronautics)(No.ILA22009);the Priority Academic Program Development of Jiangsu Higher Education Institutions,the Funding for Outstanding Doctoral Dissertation in NUAA(No.BCXJ22-02);the Interdisciplinary Innovation Fund for Doctoral Students of Nanjing University of Aeronautics and Astronautics(No.KXKCXJJ202201);the Postgraduate Research&Practice Innovation Program of Jiangsu Province(No.KYCX22_0329).

摘　　要：High-performance photonic nonvolatile memory which combines data storage and photosensing can achieve low power consumption and ensure computational energy efficiency.Heterostructure has been theoretically and experimentally proved to have synergistic effects between two materials,which can lead to promising electronic and optical properties for advanced optoelectronic devices.Herein,we report the preparation of borophene-ZnO heterostructures and their applications of broadband photonic nonvolatile memory.The memory shows a good switching ratio(5×10^(3))and long-term stability(3,600 s),which are superior to those of the pristine borophene or ZnO quantum dots(QDs).It is found that the memory shows a broad light response from ultraviolet(365 nm)to near infrared(850 nm).Besides,the SET voltage will decrease when the device is exposed to light,which can be attributed to the separation of holes and electrons in accelerating the formation of vacancy conductive filament.This work not only provides a promising material for next-generation photoelectric information,but also paves the way for borophene-based memory towards data storage devices.

关 键 词：borophene ZNO HETEROSTRUCTURE photoluminescence(PL)quenching nonvolatile memory light control 

分 类 号：TN25[电子电信—物理电子学]