Controllable substitutional vanadium doping in wafer-scale molybdenum disulfide films  

作　　者：Jihyung Seo Eunbin Son Jiha Kim Sun-Woo Kim Jeong Min Baik Hyesung Park 

机构地区：[1]Department of Materials Science and Engineering,Graduate School of Semiconductor Materials and Devices Engineering,Graduate School of Carbon Neutrality,Low Dimensional Carbon Materials Center,Ulsan National Institute of Science and Technology,Ulsan 44919,Republic of Korea [2]School of Advanced Materials Science and Engineering,Sungkyunkwan University(SKKU),Suwon 16419,Republic of Korea [3]SKKU Institute of Energy Science and Technology,Sungkyunkwan University,Suwon 16419,Republic of Korea

出　　处：《Nano Research》2023年第2期3415-3421,共7页纳米研究（英文版）

基　　金：supported by Basic Science Research Program through the National Research Foundation of Korea(NRF)funded by the Korea government(MSIT)(Nos.2019R1A2C1009025 and 2022R1A4A2000823);2022 research Fund(No.1.220024.01)of Ulsan National Institute of Science&Technology(UNIST).

摘　　要：Substitutional atomic doping of transition metal dichalcogenides(TMDs)in the chemical vapor deposition(CVD)process is a promising and effective strategy for modifying their physicochemical properties.However,the conventional CVD method only allows narrow-range modulation of the dopant concentration owing to the low reactivity of the precursors.Moreover,the growth of wafer-scale monolayer TMD films with high dopant concentrations is much more challenging.Herein,we report a facile doping approach based on liquid precursor-mediated CVD process for achieving high vanadium(V)doping in the MoS_(2)lattice with excellent doping uniformity and stability.The lateral growth of the host MoS_(2)lattice and the reactivity of the V precursor were simultaneously improved by introducing an alkali metal halide as a reaction promoter.The metal halide promoter enabled the wafer-scale synthesis of V-incorporated MoS_(2)monolayer film with excessively high doping concentrations.The excellent wafer-scale uniformity of the highly V-doped MoS_(2)film was confirmed through a series of microscopic,spectroscopic,and electrical analyses.

关 键 词：doping concentration reaction promoter substitutional doping transition metal dichalcogenides wafer-scale growth 

分 类 号：O62[理学—有机化学]